Resistive random access memory and method for improving positive and negative current difference of resistive random access memory

A resistive memory and resistive technology are applied in the field of resistive memory and improving its positive and negative current difference, which can solve problems such as misreading of stored information, and achieve the effects of broad application prospects, improved reliability, and strong practicability.

Active Publication Date: 2016-01-06
FUZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, crosstalk currents in this architecture can lead to misreading of stored information

Method used

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  • Resistive random access memory and method for improving positive and negative current difference of resistive random access memory
  • Resistive random access memory and method for improving positive and negative current difference of resistive random access memory
  • Resistive random access memory and method for improving positive and negative current difference of resistive random access memory

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Experimental program
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Effect test

Embodiment 1

[0058] A resistive variable memory, its structure is as follows figure 1 As shown in (a), a glass substrate 4, ITO with a thickness of 200nm is used as the first terminal electrode 3, ZnO with a thickness of 15nm is used as the second resistive layer 22, and HfO with a thickness of 30nm x The first resistive switch layer 21 and Ti with a thickness of 200 nm are used as the second terminal electrode 1 .

[0059] In order to increase the positive and negative current difference of the resistive variable memory, the specific manufacturing steps are as follows:

[0060] Put the glass substrate with the ITO conductive film into the vacuum chamber, and prepare 15nm ZnO as the second resistive layer 22 by magnetron sputtering; and (100 watts, 200 seconds) Ar plasma treatment of the second resistive layer 22 of ZnO with three pairs of parameters; followed by magnetron sputtering to prepare 30nm HfO x As the first resistive switch layer 21, thereby forming a double-layer storage medi...

Embodiment 2

[0063] A resistive memory whose structure is as follows figure 1 As shown in (d), the PET substrate 4, Ti with a thickness of 200 nm as the first terminal electrode 3, ZnO nanowires with a length of 10 μm and a diameter of 50 nm as the resistive medium layer 2, and Ti with a thickness of 200 nm as the first terminal electrode 3. Two terminal electrodes 1 are formed.

[0064] In order to improve the positive and negative current difference of the resistive memory, the specific manufacturing steps are as follows:

[0065] The ZnO nanowires were sprinkled on the PET substrate, and then the first terminal electrode was fabricated on the ZnO nanowires by magnetron sputtering, and then the ZnO nanowires were treated with 100 watt Ar plasma for 120 seconds, and then the ZnO nanowires were deposited on the ZnO nanowires. The second end electrode is prepared by magnetron sputtering at the other end.

[0066] It can be seen from the test, such as Figure 4 As shown, the difference be...

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Abstract

The invention relates to a resistive random access memory and a method for improving a positive and negative current difference of the resistive random access memory. The resistive random access memory comprises a substrate, a first terminal electrode, a variable resistance medium layer and a second terminal electrode, wherein the first terminal electrode is arranged on the substrate and forms a good electric contact together with the substrate; the variable resistance medium layer is arranged at the left side or the upper part of the first terminal electrode; if the variable resistance medium layer is arranged at the left side of the first terminal electrode, the second terminal electrode is arranged at the left side of the variable resistance medium layer; if the variable resistance medium layer is arranged at the upper part of the first terminal electrode, the second terminal electrode is arranged at the upper part of the variable resistance medium layer; the variable resistance medium layer is a dual-layer variable resistance medium; and the dual-layer variable resistance medium is in a laminated structure formed by a first variable resistance layer and a second variable resistance layer. By plasma modification, defects are introduced into the medium or the medium surface, so that a negative current value is effectively suppressed; and the positive and negative current difference is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor memory, and particularly relates to a resistive memory and a method for improving the difference between positive and negative currents thereof. Background technique [0002] Resistive variable memory (RRAM) is usually composed of a simple sandwich structure (electrode / storage medium / electrode), and by applying an electrical signal, the resistance state of the storage material is changed to achieve a bistable storage function. As technology develops, memory tends to adopt criss-cross three-dimensional integration in order to achieve higher storage densities. However, crosstalk currents in this architecture can lead to misreading of stored information. Therefore, improving the positive and negative current difference (or rectification characteristics) of the resistive memory and obtaining the nonlinearity of the current-voltage characteristic can better suppress the crosstalk current flowing...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24G11C13/00C23C14/35C23C16/44C23C14/22
Inventor 赖云锋曾泽村邱文彪程树英林培杰俞金玲周海芳郑巧
Owner FUZHOU UNIVERSITY
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