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Manufacturing method for single ZnO micron wire homojunction light emitting diode

A technology of light-emitting diodes and micro-wires, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of not having a single ZnO micro-wire

Inactive Publication Date: 2014-04-09
江苏欣和环境科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, p-type ZnO nanowires and microwires and nanowire homojunction light-emitting diodes have been prepared by CVD method, but due to the influence of preparation methods and other factors, there has been no single ZnO microwire homojunction light-emitting diode so far. Related reports

Method used

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  • Manufacturing method for single ZnO micron wire homojunction light emitting diode
  • Manufacturing method for single ZnO micron wire homojunction light emitting diode
  • Manufacturing method for single ZnO micron wire homojunction light emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] a. Fully mix ZnO powder and C powder with a purity greater than 99% according to the mass ratio of 2:1 to make the reaction source material, put the reaction source material into the quartz boat, and then put the quartz boat into the growth chamber of the chemical vapor deposition system The high temperature heating zone, the silicon substrate is located 20cm below the reaction source material;

[0021] The substrate can be zinc oxide, gallium nitride, sapphire, silicon carbide, silicon, gallium arsenide, indium phosphide, calcium fluoride, quartz, glass and metal, or it can be directly lined with the inner wall of the quartz tube of the chemical vapor deposition system end;

[0022] b. Introduce high-purity argon as the carrier gas, the flow rate of argon gas is 50ml / min, when the temperature is heated to 1000°C, inject oxygen, the flow rate of oxygen is 25ml / min, start the growth of n-type ZnO micron wires, the growth time 15 minutes;

[0023] c. Turn off the oxygen...

Embodiment 2

[0030] The method is basically the same as in Example 1, except that the two growth temperatures are both 950°C. The scanning electron micrographs of the obtained samples are as follows: image 3 shown. From image 3 It can be seen that some micron wires are formed on the surface of the sample, but the length of the micron wires is relatively short (5mm), and the orientation is not as good as that of Example 1.

Embodiment 3

[0032] The method is basically the same as in Example 1, except that the two growth temperatures are both 1100°C. The scanning electron micrographs of the obtained samples are as follows: Figure 4 shown. From Figure 4 It can be seen that a large number of micron wires are formed on the surface of the sample, but the length of the micron wires is relatively short (10 mm), and the orientation is not as good as that of Example 1.

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Abstract

The invention discloses a manufacturing method for a single ZnO micron wire homojunction light emitting diode. According to the manufacturing method, a simple CVD method is adopted, parameters such as growth time are controlled, a layer of highly-oriented undoped n-type ZnO micron wires grow on a substrate at first, and then a layer of Sb-doped p-type ZnO micron wires grow on the highly-oriented undoped n-type ZnO micron wires, so that the homojunction of the ZnO micron wires is manufactured; a single micron wire is stripped from the bottom of the sample substrate, and electrodes are manufactured at the two ends of the micron wire, wherein the diameter of the micron wire is 10-100 micrometers, and the length of the micron wire is 1-20mm. The manufacturing process is simple, the cost is low, and device test results show that the device has the good rectification characteristic and the higher light emitting property.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, and in particular relates to a method for preparing a single ZnO micron wire homojunction light-emitting diode by chemical vapor deposition (CVD) equipment. Background technique [0002] ZnO is a semiconductor material with direct bandgap and wide bandgap. The bandgap at room temperature is 3.37eV, and the exciton binding energy is as high as 60meV. It has broad application prospects in different fields such as optoelectronics, catalysis, sensing, and biochemistry. The ZnO with nano / micro structure has more superior properties than thin film and bulk single crystal, such as high crystal quality and quantum confinement effect, etc., and can be used for optoelectronic devices such as nano / micro ultraviolet lasers, light-emitting diodes, and field emission transistors. Preparation has become a new hotspot in the research field of nano / micro semiconductor materials. Compared with the nanostructu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/26H01L33/02H01L33/00
CPCH01L33/0083H01L33/0093H01L33/20H01L33/28
Inventor 冯秋菊唐凯吕佳音刘洋李梦轲
Owner 江苏欣和环境科技有限公司
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