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Diode based on two-dimensional tellurene/two-dimensional electron gas heterojunction and preparation method of diode

A two-dimensional electron gas and two-dimensional heterojunction technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, and circuits, can solve problems such as loss of rectification characteristics, poor rectification, and failure to work, and achieve good rectification and performance Excellent, simple structure effect

Inactive Publication Date: 2021-11-30
SUZHOU UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Devices made of similar structures in the prior art have poor rectification at room temperature, the ratio of forward current to negative current is small, and there is leakage in the negative direction
Many devices with similar structures lose their rectification characteristics at low temperatures and cannot work in special environments

Method used

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  • Diode based on two-dimensional tellurene/two-dimensional electron gas heterojunction and preparation method of diode
  • Diode based on two-dimensional tellurene/two-dimensional electron gas heterojunction and preparation method of diode
  • Diode based on two-dimensional tellurene/two-dimensional electron gas heterojunction and preparation method of diode

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Embodiment

[0041] refer to figure 1 Shown is a schematic diagram of the structure of the 2D-Te / 2DEG heterojunction of the embodiment of the present invention. The diode includes a strontium titanate substrate 1 and a two-dimensional heterojunction and metal electrodes arranged on the strontium titanate substrate 1 3. The two-dimensional heterojunction is composed of a two-dimensional tellurene 2 and a two-dimensional electron gas 4, the two-dimensional tellurene 2 is arranged on the surface of the strontium titanate substrate 1, and the two-dimensional electron gas 4 is composed of ions It is obtained by bombarding a strontium titanate substrate 1 with a beam; the metal electrode 3 partially covers the surface of the two-dimensional tellurene 2, and the metal electrode 3 and the two-dimensional electron gas 4 are electrically connected through a wire 5, And the metal electrode 3 has no contact with the two-dimensional electron gas 4 .

[0042]The diode and its preparation method based o...

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Abstract

The invention relates to a diode based on a two-dimensional tellurene / two-dimensional electron gas heterojunction and a preparation method of the diode, and belongs to the technical field of semiconductors. Two-dimensional tellurene is transferred to the surface of a strontium titanate substrate, two-dimensional electron gas is induced on the surface of the strontium titanate substrate through argon ion beam bombardment, and the two-dimensional electron gas is in contact with the two-dimensional tellurene to form the Van der Waals heterojunction. The forward current of the two-dimensional tellurene nanowire / two-dimensional electron gas heterojunction and the forward current of the two-dimensional tellurene nanosheet / two-dimensional electron gas heterojunction are 103 times and 107 times higher than the reverse current of the two-dimensional tellurene nanowire / two-dimensional electron gas heterojunction respectively, and both the two-dimensional tellurene nanowire / two-dimensional electron gas heterojunction and the two-dimensional tellurene nanosheet / two-dimensional electron gas heterojunction have excellent diode rectification characteristics. The diode provided by the invention has very high stability, and even if the negative voltage is up to -100V, the diode cannot be broken down. The heterojunction diode is simple in structure, simple to prepare and excellent in performance, and can be widely applied to the fields of electronic chips, intelligent devices and the like.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a diode based on a two-dimensional tellurene / two-dimensional electron gas heterojunction and a preparation method thereof. Background technique [0002] Among many semiconductor devices, the diode is relatively the simplest device, but it is also one of the most commonly used basic electronic components in power electronic circuits, and its role in the circuit is light. With the continuous improvement of switching devices and the continuous improvement of switching speed, the requirements for diode performance are also getting higher and higher. Therefore, a new diode is required to achieve an increase in reverse voltage and an expansion of the operating temperature range. Since the successful preparation of two-dimensional tellurene (2D-Te) in 2017, due to its thickness-dependent bandgap, environmental stability, piezoelectric effect, high carrier mobility and photorespon...

Claims

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Application Information

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IPC IPC(8): H01L29/267H01L21/329H01L29/861
CPCH01L29/267H01L29/66969H01L29/861
Inventor 姜昱丞龚帅楠高炬
Owner SUZHOU UNIV OF SCI & TECH
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