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TiO2 film/SiO2/p-Si heterojunction photosensitive material and preparation method and application thereof

A photosensitive material and heterojunction technology, applied in the fields of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve problems such as application limitations of visible light detectors, and achieve excellent photoconductive properties and obvious diode rectification properties.

Inactive Publication Date: 2020-06-30
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] TiO 2 It is a wide bandgap semiconductor commonly used in ultraviolet photodetectors, but its application in visible light detectors is limited

Method used

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  • TiO2 film/SiO2/p-Si heterojunction photosensitive material and preparation method and application thereof
  • TiO2 film/SiO2/p-Si heterojunction photosensitive material and preparation method and application thereof
  • TiO2 film/SiO2/p-Si heterojunction photosensitive material and preparation method and application thereof

Examples

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Effect test

no. 1 example

[0055] A kind of TiO 2 Thin film / SiO 2 The preparation method of p-Si heterojunction photosensitive material comprises the following steps:

[0056] (1) Preparation of precursor solution: under magnetic stirring at room temperature, firstly add 3 ml of acetylacetone to 50 ml of absolute ethanol, and stir for 30 min with magnetic force. Slowly add 6 ml of butyl titanate dropwise, and keep magnetic stirring during the dropwise addition of butyl titanate. Then add 50ml of absolute ethanol, and the pH of the solution is 5.5 at this time. Finally, the pH of the solution was adjusted to 3 by adding concentrated nitric acid dropwise, the resulting solution was magnetically stirred for 2h, and then left to stand for 4h to obtain a light yellow clear precursor solution.

[0057] (2) Clean Si substrate: In this embodiment, a single crystal Si sheet is used as the substrate, which is p-type silicon with a resistivity of 10.4Ω cm (measured by the four-probe method) and a thickness of 5...

no. 2 example

[0061] A kind of TiO 2 Thin film / SiO 2 The preparation method of p-Si heterojunction photosensitive material comprises the following steps:

[0062] (1) Preparation of precursor solution: under magnetic stirring at room temperature, firstly add 6 ml of acetylacetone to 100 ml of absolute ethanol, and stir for 30 min with magnetic force. Slowly add 12ml of butyl titanate dropwise, and keep magnetic stirring during the dropwise addition of butyl titanate. Then add 100ml of absolute ethanol, and the pH of the solution is 5.5 at this time. Finally, the pH of the solution was adjusted to 3.5 by adding concentrated nitric acid dropwise, the resulting solution was magnetically stirred for 2 hours, and then left to stand for 4 hours to obtain a pale yellow clear precursor solution.

[0063] (2) Clean Si substrate: In this embodiment, a single crystal Si sheet is used as the substrate, which is p-type silicon with a resistivity of 10.4Ω cm (measured by the four-probe method) and a thi...

no. 3 example

[0067] A kind of TiO 2 Thin film / SiO 2 The preparation method of p-Si heterojunction photosensitive material comprises the following steps:

[0068] (1) Preparation of precursor solution: under magnetic stirring at room temperature, firstly add 6 ml of acetylacetone to 100 ml of absolute ethanol, and stir for 30 min with magnetic force. Slowly add 12ml of butyl titanate dropwise, and keep magnetic stirring during the dropwise addition of butyl titanate. Then add 100ml of absolute ethanol, and the pH of the solution is 5.5 at this time. Finally, the pH of the solution was adjusted to 2.5 by adding concentrated nitric acid dropwise, the resulting solution was magnetically stirred for 2 h, and then left to stand for 4 h to obtain a pale yellow clear precursor solution.

[0069] (2) Clean Si substrate: In this embodiment, a single crystal Si sheet is used as the substrate, which is p-type silicon with a resistivity of 10.4Ω cm (measured by the four-probe method) and a thickness...

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Abstract

The invention relates to the technical field of photosensitive materials, in particular to a TiO2 film / SiO2 / p-Si heterojunction photosensitive material and a preparation method and application thereof. The photosensitive material comprises a TiO2 thin film deposited on a SiO2 oxide layer on a single crystal p-type Si substrate, the TiO2 thin film is composed of compact conical particles, and a TiO2 thin film / SiO2 / p-Si heterojunction is formed at the interface of the TiO2 thin film, the SiO2 oxide layer and the Si substrate. The TiO2 thin film / SiO2 / p-Si heterojunction is prepared by adopting aspray pyrolysis method, and direct-current and alternating-current electrical performance research under different illumination intensities is carried out; and an I-V curve shows that the TiO2 thin film / SiO2 / p-Si heterojunction has obvious diode rectification characteristics and high-performance photoconductivity.

Description

technical field [0001] The invention relates to the technical field of photoconductive devices, in particular to a TiO 2 Thin film / SiO 2 / p-Si heterojunction photosensitive material and its preparation method and application. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily to be regarded as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] Silicon (Si), as an important material in the microelectronics industry, is widely used in integrated circuit chips, commercial photovoltaic devices, communication devices and other fields because of its advantages such as abundant reserves, good high temperature resistance, mature processing technology and excellent radiation resistance. Applications. Many articles have reported that Si-bas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0336H01L31/109H01L31/18
CPCH01L31/0336H01L31/109H01L31/18Y02P70/50
Inventor 周小岩王立鑫张翔翔张永邱岩周鹏
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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