Unlock instant, AI-driven research and patent intelligence for your innovation.

Three-dimensional memory and method of making the same

A manufacturing method and memory technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., to achieve the effect of reducing the risk of etching through

Active Publication Date: 2019-12-10
YANGTZE MEMORY TECH CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is a method for manufacturing a three-dimensional memory and a three-dimensional memory, which can overcome problems such as etching defects in the word line connection area, and do not need to perform multiple irradiation and etching

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-dimensional memory and method of making the same
  • Three-dimensional memory and method of making the same
  • Three-dimensional memory and method of making the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0035] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0036] As indicated in this application and claims, the terms "a", "an", "an" and / or "the" do not refer to the singular and may include the plural unless the context clearly indicates an exception. Generally speaking, the terms "comprising" and "comprising" only suggest the inclusion of clearly identified steps and elements, and these steps and elements do not constitute an exclusive list, and the method or device may also contain other st...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for manufacturing a three-dimensional memory, comprising the following steps: providing a semiconductor structure, the semiconductor structure includes a stacked structure, the stacked structure includes alternately stacked dummy gate layers and dielectric layers, and formed at the end A stepped structure, the stepped structure has several layers of steps, at least one of the ends of the dummy gate layer constitutes the top surface of the step; a sacrificial layer covering the stack structure and an insulating layer covering the sacrificial layer are formed layer; removing the dummy gate layer and at least part of the sacrificial layer in contact with the dummy gate layer to form a gap between the dielectric layers; and forming a gate layer in the gap .

Description

technical field [0001] The invention mainly relates to the field of semiconductor manufacturing, in particular to a three-dimensional memory and a manufacturing method thereof. Background technique [0002] In order to overcome the limitations of two-dimensional memory devices, the industry has developed memory devices with a three-dimensional (3D) structure to increase integration density by three-dimensionally arranging memory cells on a substrate. [0003] In a three-dimensional memory device such as 3D NAND flash memory, a memory array may include a core region and a stair region. The step region is used to lead out the contact portion for the gate layer in each layer of the memory array. These gate layers are used as word lines of the memory array to perform operations such as programming, erasing, and reading. [0004] In the manufacturing process of 3D NAND flash memory, contact holes are formed by etching on the stepped structures of all levels in the step region, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L27/11575H01L27/11578H10B69/00H10B43/20H10B43/50
CPCH10B43/50H10B69/00H10B43/20
Inventor 张帜华文宇顾立勋李思晢肖亮夏志良霍宗亮
Owner YANGTZE MEMORY TECH CO LTD