Thin film transistor array substrate and liquid crystal display panel
A technology of thin film transistors and array substrates, applied in the field of liquid crystal display, can solve the problem of brightness difference between A area and B area, and achieve the effect of reducing the crosstalk phenomenon
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no. 1 example
[0033] Figure 6 is a schematic cross-sectional structure diagram of the thin film transistor array substrate according to the first embodiment of the present invention; Figure 7 for Figure 6 A schematic plan view of the thin film transistor array substrate shown. Such as Figure 5 and Figure 6As shown, in this embodiment, the thin film transistor array substrate includes a substrate 31, a thin film transistor 33, a first protective layer 35, a common electrode 36, a second protective layer 37 and a pixel electrode 38, and the thin film transistor 33 is arranged on the substrate 31 , the first protection layer 35 covers the thin film transistor 33 , the common electrode 36 is disposed on the first protection layer 35 , the second protection layer 37 covers the common electrode 36 , and the pixel electrode 38 is disposed on the second protection layer 37 . The thin film transistor array substrate also includes a plurality of pixel units P defined by the scan line 39 and ...
no. 2 example
[0041] Such as Figure 8 As shown, the thin film transistor array substrate of the second embodiment is basically similar in structure to the thin film transistor array substrate of the first embodiment. The notch 382 can reduce the coupling capacitance on the second side of the pixel electrode 38 by opening the second notch 384 , and make the reduced coupling capacitance substantially equal to the coupling capacitance between the source 336 and the drain 338 .
no. 3 example
[0043] Such as Figure 9 As shown, the thin film transistor array substrate of the third embodiment is basically similar in structure to the thin film transistor array substrate of the first embodiment, the difference lies in the first notch 382 and the second notch 384 opened on the pixel electrode 38 of the third embodiment The size is different from the first embodiment, the distance W1 between the edge of the first notch 382 and the data line 40 close to the first side is smaller than the distance W2 between the drain electrode 338 and the source electrode 336, the length L1 of the first notch 382 Equal to the length L2 where the drain 338 and the source 336 have a capacitive coupling effect, there is a capacitive coupling effect between the edge of the second gap 384 and the data line 40, between the edge of the first gap 382 and the data line 40 near the first side The distance W1 between them is smaller than the distance W3 between the edge of the second notch 384 and t...
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