A metal package rectifier diode and a manufacturing method thereof

Abstract

A metal package rectifierdiode and a manufacturing method thereof are disclosed. Thediode comprise a die holder, a die assembly, a lead post and a tube cap. The tube holder and the tube cap respectively form a first electrode and a second electrode; The die assembly is welded on the pipe base, one end of the lead post is welded on the die assembly, and the other end is fixedly connected with the pipe cap; A lead post is arrange through that pipe cap, and the pipe cap is sealingly connected with the pipe seat and the lead post respectively; A lead post is for of a plurality of strands of metalwire, and a metal sleeve for fastening that metal wire is arranged at both ends. A manufacture method includes obtain an upper electrode sheet and a lower electrode sheet, sintering to form a die assembly and sintering seal welding. The diode can meet the use demand of more than 5A current, has strong heat dissipation ability, simple structure and ingenious design; Connection quality and conduction characteristics are guaranteed. The method ensures the sintering quality and reliability of the die assembly, ensures the good adhesion between the part and the solder, and realizes the stable, reliable and fast direct sintering of the die assembly with the bare copper pipe socket, the lead post and the red copper ring.

Description

technical field [0001] The invention relates to the technical field of semiconductor component preparation, in particular to a metal package rectifier diode and a manufacturing method thereof. Background technique [0002] A rectifier diode is a semiconductor device used to convert alternating current to direct current and has a wide range of applications. The maximum average rectified current IF, as one of its important commonly used parameters, can reflect the working performance of the rectifier diode. It is defined as the maximum forward average current allowed to pass through the diode during long-term operation. The current is determined by the junction area and heat dissipation conditions of the PN junction. When using, it should be noted that the average current through the diode cannot be greater than this value, and the heat dissipation conditions must be met. For example, the IF of the 1N4000 series diode is 1A, which is a plastic packaged device, with low produc...

AI Technical Summary

Problems solved by technology

For example, the IF of the 1N4000 series diode is 1A, which is a plastic package device, with low product quality and low reliability.

In the prior art, due to the limitation of the structure and manufacturing process of the rectifier diode, its IF value is below 5A, which cannot meet the requirement of IF above 5A under some application conditions.

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