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A topological structure of a parallel current sharing circuit

A circuit topology, parallel technology, applied in electrical components, high-efficiency power electronic conversion, output power conversion devices, etc., can solve the problems of complex outlet terminals or outlet methods, discounts on application value, etc.

Active Publication Date: 2018-12-11
YUNNAN KAFANG ELECTROMECHANICAL EQUIP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this current sharing method of magnetic ring crossing is generally only applicable to the case where two devices are connected in parallel, and a specially designed outlet terminal or outlet method is required to realize the magnetic ring crossing
When multiple devices need to be connected in parallel, the outlet terminals or outlet methods will be very complicated, which will greatly reduce the application value

Method used

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  • A topological structure of a parallel current sharing circuit
  • A topological structure of a parallel current sharing circuit
  • A topological structure of a parallel current sharing circuit

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Embodiment Construction

[0024] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0025] The technical scheme adopted in the present invention is as figure 2 As shown, a parallel current sharing circuit topology includes Ⅰ DC bus voltage V dc , Ⅱ DC link capacitor C dc 、ⅢN parallel SiC-MOSFET half-bridge module HBM 1 ~HBM N , Ⅳ parallel current sharing circuit. The outputs of ⅢN parallel SiC-MOSFET half-bridge modules are connected together through the proposed Ⅳ parallel current sharing circuit. The Ⅳ parallel current sharing circuit consists of N ring cores and N additional windings. Each ring core has Wind an additional winding. These additional windings on the core are identical by w 1 ~w N express. N additional windings w 1 ~w N connected in series.

[0026] image 3 show figure 2 The analysis model of the IV parallel current sharing circuit. The output terminal of the SiC-MOSFET half-bridge module dire...

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Abstract

The invention relates to a topological structure of a parallel current sharing circuit, comprising a DC bus bar, N parallel power modules respectively connected to the DC bus bar at both ends and a parallel current sharing circuit, wherein N output ends of the N parallel power modules are connected together through the parallel current sharing circuit; The parallel current sharing circuit comprises N ring-shaped magnetic cores and N additional windings, each additional winding is wound on each ring-shaped magnetic core respectively. The present invention does not rely on sensors and feedback control, the circuit structure is simple and feasible, At the same time, the topological structure of the parallel current sharing circuit has good expansibility and can be easily extended to any number of shunt power devices, and can be used in various situations where shunt power devices are needed, especially in high-power multi-device shunt situations, and the current sharing effect is good, and the transient current balance of each shunt power device can be well realized, so the topological structure has high application value.

Description

technical field [0001] The invention belongs to the technical field of power electronic converters, and in particular relates to a current sharing circuit for a plurality of parallel SiC-MOSFET modules used in power converters and the like. Background technique [0002] SiC semiconductor power devices are very suitable for high frequency, high efficiency and high temperature applications due to their excellent performance. However, the maximum current rating of SiC-MOSFET power modules currently available in the market is only a few hundred amperes (about 300A), which is not enough for high-power applications. To increase the current rating of the power converter, multiple SiC-MOSFET modules can be connected in parallel. When SiC-MOSFETs are connected in parallel, the transient current balance between parallel SiC-MOSFETs must be ensured, otherwise local overcurrent and overheating will be caused, and the reliability of parallel SiC-MOSFETs will be affected. The main reaso...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/00H02M1/088
CPCH02M1/00H02M1/088Y02B70/10
Inventor 鲁思兆李思奇
Owner YUNNAN KAFANG ELECTROMECHANICAL EQUIP