pixel structure

Abstract

The invention provides a pixel structure comprising a thin film transistor having a first gate electrode and a second gate electrode and an active layer having a first strip part and a second strip part. The first gate electrode is inclined in the extending direction of the orthogonal projection on the plane of the active layer and the extending direction of the first strip part. The second gate electrode is inclined in the extending direction of the orthogonal projection on the plane of the active layer and the extending direction of the second strip part. The first gate electrode and the first strip part of the active layer are obliquely overlapped and the second gate electrode and the second strip part of the active layer are obliquely overlapped so that the effective channel length ofthe channel region of the thin film transistor can be enhanced.

Description

Technical field [0001] The present invention relates to the field of display technology, in particular to a pixel structure. Background technique [0002] In the display area of ​​an AMOLED display device, pixels are arranged in a matrix with multiple rows and multiple columns. Usually, each pixel is usually composed of two thin film transistors and a capacitor, commonly known as a 2T1C circuit. This 2T1C design is very sensitive to the following factors: the threshold voltage (Vth) and channel mobility (Mobility) of the TFT, the startup voltage and quantum efficiency of the OLED, and the transient process of the power supply. Therefore, compensation circuits are generally used to reduce the impact, such as 7T1C, 6T1C, 6T2C, etc. [0003] In the structure of the 7T1C pixel drive circuit, please refer to figure 1 with figure 2 , The thin film transistor T4' is used to control the discharge of the capacitor, the gate of the thin film transistor T4' is connected to the scan line Sca...

AI Technical Summary

Problems solved by technology

[0009] An embodiment of the present invention provides a pixel structure and an array substrate; in order to solve the problem that in the pixel structure of the existing 7T1C circuit, the channel length of the thin film transistor is relatively short, and the device width-to-length ratio W / L is relatively large, which leads to the leakage of the thin film transistor. The current is relatively large, which affects the compensation effect of the 7T1C circuit, resulting in a technical problem that the display panel is prone to bright spots when the screen is black

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