Semiconductor device and manufacturing method thereof
A semiconductor and device technology, applied in the field of semiconductors, can solve problems such as poor switching characteristics, and achieve the effect of good device switching characteristics and structure optimization
Inactive Publication Date: 2018-12-18
SHENZHEN JING XIANG TECH CO LTD
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Problems solved by technology
[0002] Existing semiconductor devices such as ALGaN (aluminum gallium nitride) / GaN (aluminum gallium nitride) HEMT (High Electron Mobility Transistor, high electron mobility transistor) often have poor switching characteristics. Therefore, it is necessary to propose a method that can enhance the switching characteristics Semiconductor device and manufacturing method thereof
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[0022] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0023] Such as figure 1 As shown, a semiconductor device 100 provided by an embodiment of the present invention includes: a semiconductor substrate 110, a dielectric layer 120a, a dielectric layer 120b, a dielectric layer 120c, a gate metal layer 130a, a gate metal layer 130b, and a source 140 , drain 150 and gate 160.
[0024] Wherein, the...
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The invention relates to the technical field of semiconductors, and provides a semiconductor device and a manufacturing method thereof. The semiconductor device comprises a first dielectric layer; a second dielectric layer extending into the first gate contact hole to cover a bottom of the first gate contact hole; a first gate metal layer extending into the first gate contact hole to cover the second dielectric layer located at the bottom of the first gate contact hole; a third dielectric layer extending into the second gate contact hole to cover a bottom of the second gate contact hole; a second gate metal layer extending into the second gate contact hole to cover the third dielectric layer located at the bottom of the second gate contact hole; a first source / drain; a second source / drain;and a grid. The semiconductor device of a double-gate metal structure of the invention can obtain better device switching characteristics.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device and a manufacturing method of the semiconductor device. Background technique [0002] Existing semiconductor devices such as ALGaN (aluminum gallium nitride) / GaN (aluminum gallium nitride) HEMT (High Electron Mobility Transistor, high electron mobility transistor) often have poor switching characteristics. Therefore, it is necessary to propose a method that can enhance the switching characteristics Semiconductor devices and methods of making them. Contents of the invention [0003] In order to solve the above problems, the present invention provides a semiconductor device with a double gate metal structure and a manufacturing method thereof, which can enhance the switching characteristics of the device. [0004] Specifically, a semiconductor device provided by an embodiment of the present invention includes: a semiconductor substrate; a first diel...
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IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/778H01L29/66431
Inventor 刘美华林信南刘岩军
Owner SHENZHEN JING XIANG TECH CO LTD