A semiconductor chip of the light emitting diode, a current spreading layer thereof, and a method of manufacturing the same

Abstract

The invention discloses a semiconductor chip of a light emitting diode and a current spreading layer thereof and a manufacturing method thereof, wherein the semiconductor chip comprises a substrate, an N-type gallium nitride layer, a current spreading layer, a quantum well layer, a P-type gallium nitride layer, an N-type electrode and a P-type electrode, wherein the N-type gallium nitride layer islaminated on the substrate, and the current spreading layer is laminated on the N-type gallium nitride layer, wherein the current spreading layer comprises at least one N-GaN layer and at least one U-GaN layer, wherein that quantum well layer is laminated on the current spreading layer, the P-type gallium nitride layer is laminate on the quantum well layer, the N-type electrode is electrically connected to the current spreading layer, and the P-type electrode is electrically connected to the P-type gallium nitride layer. The current spreading layer can weaken the longitudinal current spreading ability and improve the lateral current spreading ability of the semiconductor chip, thereby facilitating the uniform distribution of the current, thereby improving the luminous efficiency of the semiconductor chip.

Description

technical field [0001] The invention relates to a light emitting diode, in particular to a semiconductor chip of a light emitting diode, its current spreading layer and a manufacturing method. Background technique [0002] In recent years, with the large-scale promotion and application of LED (Light Emitting Diode), LED-related technologies have also developed by leaps and bounds. The III-V nitrides are direct bandgap semiconductors, which have excellent physical properties such as large band gap, high breakdown electric field, and high electron saturation mobility. Therefore, the application of III-V nitrides in the LED field has been greatly Widespread concern. In LEDs using III-V nitrides, GaN-based blue and white light-emitting devices have higher efficiency than any conventional light source, which makes GaN-based LED light-emitting devices widely used in various New industries, especially high-power, large-size, high-current-density LED light-emitting devices, are ex...

AI Technical Summary

Problems solved by technology

However, due to the high current density of the GaN-based LED light-emitting device, it inevitably has some defects in the GaN-based LED light-emitting device, for example, the GaN-based LED light-emitting device is easily damaged due to the current congestion effect. The life and stability of the light-emitting device have adverse effects, and at high current densities, Auger recombination intensifies, the proportion of non-radiative recombination increases, the efficiency drops significantly, and the current diffusion capacity is insufficient. The overall luminescence is uneven and cannot be maximized. Light emitting device performance

In addition, in the existing GaN-based LED light-emitting devices, only the GaN layer is used as the current spreading layer, which leads to a strong vertical expansion capability of the existing GaN-based LED light-emitting devices, and the horizontal expansion capability increases with distance The increase gradually weakens, which leads to the overall uneven light emission of the LED light-emitting device, which is specifically manifested in: the closer the light-emitting device is to the P-type electrode, the stronger the luminous intensity is, and the closer the N-type electrode is to emit light. The weaker the intensity, at the same time, the surface resistance increases due to insufficient current expansion in the area close to the N-type electrode, and the heat is serious, which seriously affects the service life of the light-emitting device.

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