Manufacturing method of neutron irradiated silicon single crystal
A manufacturing method, silicon single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve problems such as deviation
Active Publication Date: 2021-12-14
SUMCO CORP
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The amount of neutron irradiation N in the neutron irradiation step is calculated based on the resistivity R1 of the raw material and the target resistivity RT, but the actual resistivity R2 after neutron irradiation may deviate greatly from the target resistivity RT due to the addition of nitrogen
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[0024] Hereinafter, embodiments of the present invention will be described based on the drawings. figure 1 It is a cross-sectional view showing an example of an apparatus for producing a silicon single crystal by the Czochralski method (CZ method) used in the method for producing a silicon single crystal by neutron irradiation according to the present invention. It should be noted that the neutron-irradiated silicon single crystal production method of the present invention can be applied not only to silicon single crystals produced by the CZ method but also to silicon single crystals produced by the floating zone method (FZ method). Hereinafter, an example of applying the present invention to a silicon single crystal produced by the CZ method will be described. The silicon single crystal manufacturing apparatus 1 of this embodiment (hereinafter also simply referred to as the manufacturing apparatus 1 ) includes a cylindrical first chamber 11 and a similarly cylindrical second ...
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In the method of producing a silicon single crystal with a predetermined resistivity by irradiating an ingot (I) of a grown silicon single crystal (C) with neutrons under intrinsic conditions and doping with phosphorus, in calculating In the case of the target neutron irradiation dose, under the above-mentioned inherent conditions, a plurality of neutron irradiation doses with different neutron irradiation doses are set for each silicon single crystal and irradiated with neutrons, and the multiplicity obtained for each neutron irradiation dose is measured. For the resistivity of the above-mentioned doped silicon single crystal, a standard curve representing the relationship between the above-mentioned neutron irradiation amount and the above-mentioned resistivity is obtained in advance, and the neutrons obtained by using the above-mentioned standard curve to make the resistivity reach the above-mentioned specified resistivity The irradiation dose was set to the aforementioned target neutron irradiation dose.
Description
technical field [0001] The present invention relates to a method for manufacturing silicon single crystals irradiated with neutrons. Background technique [0002] As a method for producing a neutron-irradiated silicon single crystal, a neutron-irradiated silicon single crystal production method has been proposed, which has the method of growing a silicon single crystal ingot with an average resistivity of 1000 Ω·cm or more while adding nitrogen by the FZ method. step, the step of irradiating the silicon single crystal ingot with neutrons, and the step of performing heat treatment for recovering the damage caused by the neutron irradiation, wherein at least before the step of neutron irradiating the silicon single crystal ingot, the The silicon single crystal is subjected to heat treatment for eliminating the donor, and the neutron irradiation step is performed by calculating the neutron irradiation amount from the resistivity of the silicon single crystal subjected to the he...
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IPC IPC(8): C30B29/06
CPCC30B29/06H01L21/26
Inventor 早川裕
Owner SUMCO CORP