A power device protection chip and a manufacturing method thereof
A technology for protecting chips and power devices, which is applied in the field of power device protection chips and its production, and can solve problems such as performance that cannot meet the requirements of circuits.
Active Publication Date: 2018-12-28
深圳市源新科技有限公司
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Problems solved by technology
[0004] The performance of the current power device protection chip still cannot meet the needs of the existing technology for circuit protection. Therefore, it is necessary to improve the manufacturing process of the power device protection chip, so as to improve the performance of the power device protection chip
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[0043] The invention will be described in more detail below with reference to the accompanying drawings. In the various figures, the same elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.
[0044] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.
[0045] If the purpose is to describe the situation directly on another layer or another a...
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The invention provides a power device protection chip and a manufacturing method thereof, the method comprising the steps of: providing a substrate of a first conductivity type; growing a first epitaxial layer of a second conductivity type on an upper surface of the substrate; forming a second epitaxial layer of a first conductivity type on an upper surface of the first epitaxial layer; forming afirst trench extending through the second epitaxial layer to the first epitaxial layer; alternately forming a third epitaxial layer of a second conductivity type and a fourth epitaxial layer of a fourth conductivity type in the first trench; forming a first dielectric layer on a side wall of the first trench; forming a second trench through the substrate and the first epitaxial layer and connectedto the first trench; forming a polysilicon layer in the second trench; forming a first electrode on an upper surface of the second epitaxial layer; forming a second electrode on the lower surface ofthe substrate, thereby reducing the process difficulty and improving the performance of the power device protection chip.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power device protection chip and a manufacturing method thereof. Background technique [0002] The power device protection chip is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, small leakage current and reliable High performance, so it has been widely used in voltage transient and surge protection. The low-capacitance power device protection chip is suitable for high-frequency circuit protection devices, because it can reduce the interference of parasitic capacitance on the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge (ESD), along with other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices. As semiconduc...
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IPC IPC(8): H01L27/02
CPCH01L27/0255
Inventor 不公告发明人
Owner 深圳市源新科技有限公司