Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-band filter based on SIW structure

A filter and three-band technology, applied in the field of electronic information, can solve the problem of no source-negative coupling, etc., and achieve the effect of improving stop-band attenuation, simple structure, and low manufacturing process requirements

Active Publication Date: 2018-12-28
HANGZHOU DIANZI UNIV
View PDF8 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The previous source negative coupling was more achieved by adding microstrip lines to the input and output feeders, introducing additional circuits, and did not make reasonable use of multiple inherent modes of the cavity to achieve source negative coupling.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-band filter based on SIW structure
  • Three-band filter based on SIW structure
  • Three-band filter based on SIW structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] The present invention will be further described below in conjunction with accompanying drawing

[0042] like figure 1 As shown in (d), the three-band filter of the invention is formed by superimposing two layers of PCB boards. exist figure 1 There are two types of metal vias in the upper dielectric plate 16 shown in (a), one is a plurality of first metal pillars 1 forming the electric wall of the resonator, and the other is a plurality of second ( 5, 6, 7, 8, 9) and two third metal posts (3, 4). The perturbed metal vias are introduced to rationally utilize the first four modes of a single rectangular SIW cavity to form two passbands. The "cross-shaped" second metal pillar is located in the center of the rectangular SIW cavity on the upper dielectric plate, because at the center of the cavity, the electric fields of the TE101 and TE301 modes are the strongest, and the electric fields of the TE201 and TE401 modes are the weakest, and the introduced second metal The co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a three-band filter based on an SIW structure. The invention overlaps and connects a single rectangular SIW structure and two square SIW structures to form a three-band filter.The first four resonant modes of the rectangular SIW structure work simultaneously, while the square SIW structure only works in the fundamental mode. The TE101 and TE201 modes of the rectangular SIWcavity combine to form a first frequency band of the filter, and the TE301 and TE401 modes combine to form a third frequency band of the filter. The fundamental mode TE101 modes of the two square cavities are combined to form a second frequency band. At the same time, the offset input and output feeders introduce six transmission zeros into the filter, which improves the stopband attenuation of the filter. The SIW cavity mode is used to meet the miniaturization requirements of modern multi-standard RF system and solve the problems of large size and complex design of traditional dual-band filter.

Description

technical field [0001] The invention belongs to the field of electronic information technology, specifically a three-band filter formed by connecting a substrate integrated waveguide (SIW) multi-mode cavity and a single-mode cavity, which is a new type of rational use of the cavity mode and good out-of-band suppression Three-band RF filter. Background technique [0002] With the rapid development of modern wireless communication systems, highly compact and easy-to-integrate high-performance microwave and millimeter-wave bandpass filters (BPFs) are urgently needed. In the last decade, the emerging substrate-integrated waveguide (SIW) technology has taken a prominent place in the design of complex BPFs due to its advantages of low loss, low cost, high power handling capability, and high-density integration. [0003] SIW multi-band BPF plays an integral role in the miniaturization and integration of advanced transceivers, and various technologies have been researched and devel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01P1/208
CPCH01P1/2082H01P1/2088
Inventor 杨增游彬郭君
Owner HANGZHOU DIANZI UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products