Extraction Method of Physical Parameters of Resistance Model

A technology of resistance model and physical parameters, applied in the direction of gene model, electrical digital data processing, genetic rules, etc., can solve problems such as difficult to achieve expected efficiency and low efficiency, reduce fitting time, reduce parameter fitting error, improve fitting The effect of precision

Pending Publication Date: 2019-01-01
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Most of the existing methods are to use EXCEL or some electronic design automation (Electronics Design Automation, EDA), EDA modeling software to manually adjust the parameters to achieve the minimum error between the model simulation value and the actual test value, because the fitting data size is large , to achieve the smallest possible cumulative error, it is difficult to achieve the expected and inefficient with these traditional methods

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  • Extraction Method of Physical Parameters of Resistance Model
  • Extraction Method of Physical Parameters of Resistance Model
  • Extraction Method of Physical Parameters of Resistance Model

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Embodiment Construction

[0036] Such as figure 1 As shown, it is a flowchart of a method for extracting physical parameters of a resistance model in an embodiment of the present invention. The method for extracting physical parameters of a resistance model in an embodiment of the present invention includes the following steps:

[0037] Step 1, making a plurality of resistors, testing the length, width and resistance value of each of the resistors, the number of the resistors is n, the length corresponding to the i-th resistor is represented by L(i), and the width is represented by W(i) Indicates that the resistance value is represented by R(i), and 1≦i≦n.

[0038] Each of the resistors in step 1 is an on-chip resistor, and each of the resistors is fabricated on a semiconductor wafer. The semiconductor wafer is a silicon wafer.

[0039] Step 2. Select the physical parameters of the resistance model. The physical parameters of the resistance model include 3, namely: normalized square resistance, corre...

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Abstract

The invention discloses a method for extracting physical parameters of a resistance model, which comprises the following steps: step 1, manufacturing a plurality of resistors, and testing the length,width and resistance value of each resistor; 2, selecting physical parameters of that resistance model, wherein the number of the physical parameters of the resistance model is three, namely, normalized square resistance, corrected line length and corrected line width; 3, setting an accumulated error function of the resistance, the equation is described in the description; 4, a genetic algorithm is used to extract the normalized square resistor, and the values of the line length and the line width are corrected. The resistance cumulative error function is used as the fitness function in the genetic algorithm flow. The invention can effectively reduce parameter fitting error and fitting time.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for extracting physical parameters of a resistance model. Background technique [0002] In the current VLSI R&D and manufacturing process, the efficient and accurate Simulation Program with integrated Circuit Emphasis (SPICE) model is the key to the circuit from functional design to realization, and the accuracy of the physical parameters of the resistance model Representation is also a crucial part of this. [0003] The commonly used physical parameters of resistors are: Rsh is the normalized square resistance, DW is the correction line width and DL is the correction line length, and DW and DL are used to correct the dimensional deviation caused by the manufacturing process. Most of the existing methods are to use EXCEL or some electronic design automation (Electronics Design Automation, EDA), EDA modeling software to manually adjust the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50G06N3/12
CPCG06N3/126G06F30/398G06F30/367
Inventor 王伟
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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