A reliability evaluation method for nano-integrated circuits under the influence of multiple transient faults

An integrated circuit and reliability technology, which is applied in the field of reliability evaluation of nano-integrated circuits under the influence of multiple transient faults. Insufficient degree and other problems, to achieve the effect of good scalability

Pending Publication Date: 2019-01-04
CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, although system-level reliability analysis can provide designers with quantitative results of reliability in the early stage of integrated circuit design, guide fault-tolerant design as early as possible, and help balance reliability requirements and fault-tolerance overhead; The specific logic implementation of the circuit is not accurate enough for the reliability evaluation results of the circuit as a whole
[0007] In addition, the low-level circuit-level analysis method takes into account the underlying implementation of the circuit and environmental factors, and can simulate the behavior characteristics of the fault more realistically, and the evaluation results are relatively accurate; It is at least 3-4 orders of magnitude higher than the middle and high-level evaluation methods, and it is difficult to apply to fault analysis and reliability evaluation of large-scale circuits
[0008] In addition, logic-level evaluation methods can better balance efficiency and accuracy, but most existing methods only consider the impact of single transient faults on the circuit
The considerations become more complex when multiple faults are involved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A reliability evaluation method for nano-integrated circuits under the influence of multiple transient faults
  • A reliability evaluation method for nano-integrated circuits under the influence of multiple transient faults
  • A reliability evaluation method for nano-integrated circuits under the influence of multiple transient faults

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to make the content of the present invention more clear and understandable, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.

[0030]In the reliability research of logic circuits, the widely used probability gate model means that each logic gate in the circuit has the same correct output probability when it is affected by the space radiation environment. Considering the actual manufacturing process of the gate circuit, it can also be considered that the correctness of the output of the logic unit due to particle impact is independent of each other. Based on this model, the correct output of a single logic unit of the circuit under the influence of the external environment is regarded as a random event, and the probability of the number of faulty logic units in the circuit being a certain value obeys the binomial distribution. This method mainly studies combinational circui...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a nano integrated circuit reliability evaluation method under the influence of multiple transient faults, comprising the following steps: 1, establishing a circuit reliability calculation formula of the nano integrated circuit to be evaluated; 2, determining the parameter value of the zero-fault direct current component in the reliability calculation formula; 3, performing single-fault simulation on a nano integrated circuit to be evaluate to evaluate a first-order principal component in a circuit reliability calculation formula; 4, carrying out dual-fault simulation onthat nano integrated circuit to be evaluated; 5, carrying out probability statistical analysis on the data obtained from the double-fault simulation to evaluate the second-order components in the circuit reliability calculation formula.

Description

technical field [0001] The present invention relates to the field of integrated circuit reliability evaluation; more specifically, the present invention relates to a method for evaluating the reliability of nanometer integrated circuits under the influence of multiple transient faults. Background technique [0002] Integrated circuit technology is an important part of modern electronic information technology. In the current complex and ever-changing international environment, the development of a highly reliable and self-controllable chip industry is particularly important. With the gradual maturity of nanotechnology, the scale of the circuit continues to increase, the feature size of the device continues to shrink, and the performance of the chip is improved, but at the same time, the transient faults caused by various energy particles in the space radiation environment are also It brings serious challenges to the reliability of the circuit. [0003] Transient fault is a ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50
CPCG06F30/367G06F30/398
Inventor 蔡烁王伟征余飞邱佳
Owner CHANGSHA UNIVERSITY OF SCIENCE AND TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products