Lower electrode mechanism of reaction chamber and reaction chamber

Abstract

The invention provides a lower electrode mechanism of a reaction chamber and a reaction chamber, which includes a base for carrying a workpiece to be processed and an adapter disk made of an insulating material, the adapter plate is arranged at the bottom of the base, and a plurality of trace channels are arranged in the adapter plate, the input terminals of the plurality of trace channels converge to the center position of the bottom surface of the adapter plate, and the output terminals of the plurality of trace channels are dispersively arranged on the top surface of the adapter plate, andcorrespond to the positions of the conductive component interfaces with different functions in the base one by one. The lower electrode mechanism of the reaction chamber provided by the invention cannot only improve the wire routing consistency of the conductive parts with different functions, thereby improving the consistency of the capacitance of the base to the ground in the different chambers, but also can avoid the generation of the deflected electromagnetic field, thereby improving the process uniformity.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a lower electrode mechanism of a reaction chamber and a reaction chamber. Background technique [0002] Inductively coupled plasma etching (Inductive Coupled Plasma, hereinafter referred to as ICP) equipment is widely used in the field of semiconductor wafers, especially in the field of silicon etching. [0003] Existing ICP equipment includes an air inlet mechanism and an upper electrode mechanism installed above the reaction chamber, and a lower electrode mechanism located in the reaction chamber, wherein the air inlet mechanism is used to deliver process gas into the reaction chamber; the upper electrode mechanism is used for The plasma is formed by exciting the process gas; the lower electrode mechanism is used to carry the workpiece to be processed, and apply a radio frequency bias voltage to the workpiece to attract the plasma to etch the surface of the ...

AI Technical Summary

Problems solved by technology

[0006] First of all, the positions of the input ends of the multiple wiring channels on the bottom surface of the interface board 2 correspond to the positions of the conductive component interfaces in the base 1 one by one. The installation consistency of the cables 5 in the chamber affects the consistency of the routing paths of the cables 5 in the lower electrode chamber 3 in different chambers, resulting in inconsistent capacitances of the base 1 in different chambers to ground, and thus Affects the consistency of matching between chambers

[0007] Secondly, the interface plate 2 is made of metal material, which makes the interface plate 2 and the base 1 induce an electromagnetic field, which will affect the uniformity of the process

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