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A local oscillator leakage correction device and method

A technology of local oscillator leakage and correction method, which is applied in the field of communication and can solve the problems of long processing time, complex implementation, and occupation

Active Publication Date: 2021-03-26
广东博威尔电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the need for a large amount of sample data and multiple complex operations (such as FFT operations), there are disadvantages such as long processing time, large amount of calculation, complex implementation, etc., and it takes up a lot of baseband chip hardware or software resources

Method used

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  • A local oscillator leakage correction device and method
  • A local oscillator leakage correction device and method
  • A local oscillator leakage correction device and method

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Experimental program
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Embodiment Construction

[0036] The scheme of this application is further described in conjunction with the accompanying drawings as follows:

[0037] Explanation of terms involved in this patent:

[0038] DAC digital-to-analog converter;

[0039] ADC analog-to-digital converter;

[0040] LO local oscillator;

[0041] I in-phase component;

[0042] Q quadrature component;

[0043] EVM Error Vector Magnitude.

[0044] See attached figure 1 and 2 , taking the zero-IF transceiver as an example:

[0045] It specifically includes a receiving channel and a transmitting channel, and a feedback switch is connected between the input end of the receiving channel and the output end of the transmitting channel, and the receiving channel includes a receiving side mixer and a receiving side low-pass filter LPF arranged in sequence , analog-to-digital converter ADC and local oscillator leakage detection module 1, the transmission channel includes a correction module 3, a digital-to-analog converter DAC, a tr...

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PUM

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Abstract

The invention provides a local oscillation leakage correction device and a method thereof, wherein a self resource of the device is used for self correction. The local oscillation leakage correction device comprises a correction module, a local oscillation leakage detection module, a correction algorithm control circuit and a correction parameter storage module. The local oscillator leakage detection module is used for detecting the signal strength of the local oscillator leakage. The correction algorithm control circuit is used for realizing a successive approximation algorithm of the correction parameter to obtain the correction parameter. The correction module is used for using the output volue of the correction algorithm control circuit or the storage value in the correction parameterstorage module as a direction correction value for transmitting IQ direct current, thereby realizing a purpose of performing local oscillation leakage detection. The output of the correction algorithmcontrol circuit is feedback-connected to the correction module. According to the local oscillator leakage correction method, an IQ signal pre-DC bias value of the IQ signal is obtained through an N-bit successive approximation algorithm, and the pre-DC bias value is automatically loaded into the correction module when the local oscillator leakage is normally transmitted.

Description

technical field [0001] The invention belongs to the technical field of communication, and in particular relates to a correction device and method for local oscillator leakage. Background technique [0002] The zero-IF transmitter has been widely used in the field of wireless communication due to its simple structure, high integration, low power consumption, small area, and few peripheral components required. However, due to the existence of many non-ideal factors such as production process deviation and mismatching of circuit design parameters, the circuit has inherent DC offset. The DC offset and the local oscillator leakage inevitably introduced after the local oscillator signal is mixed. In the transmitter, a large local oscillator leakage will directly deteriorate the transmission EVM and the emission spurious index will not meet the standard, which will reduce the mass production yield of the chip. Therefore, the local oscillator leakage must be suppressed or corrected....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04B1/525H04B1/40
CPCH04B1/40H04B1/525
Inventor 王昭姜洪波
Owner 广东博威尔电子科技有限公司