Control sheet and its manufacturing method and monitoring method of chemical mechanical polishing defects

Abstract

The present invention provides a control chip, its manufacturing method and the monitoring method of chemical mechanical polishing defects, by forming a patterned first dielectric layer on the upper surface of the substrate, and at least filling the patterned first dielectric layer The second dielectric layer of the grooves to fabricate the control sheet. placing the control sheet on a chemical mechanical grinder and grinding it to remove the first medium layer; then, scanning the surface of the control sheet after the treatment to obtain the upper surface of the control sheet defects, so as to realize the monitoring of the chemical mechanical polishing defects. The control sheet provided by the present invention improves the contrast between the defects on the surface of the control sheet and the background, thereby improving the capture rate of the defects caused by chemical mechanical grinding by the optical scanning machine, and realizing the effective monitoring of the chemical mechanical grinding defects .

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a control chip, a manufacturing method thereof, and a monitoring method for chemical mechanical polishing defects. Background technique [0002] In the manufacturing process of semiconductor wafers, a chemical mechanical polishing (CMP) process plays an important role in flattening the surface of the wafer. However, in the chemical mechanical polishing process, the particles in the polishing liquid and the damaged polishing pad will cause defects such as scratches and pits on the surface of the product, and when the size of the particles in the polishing liquid increases due to crystallization or the polishing pad is damaged due to When the damage is severe due to excessive use for a long time, the number of defects will increase, and the size will also increase, which will lead to a decrease in the yield of the wafer. Therefore, if the defects can be detecte...

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Problems solved by technology

However, because the initial surface of the control sheet is a flat plane, when the defects formed are relatively shallow, the contrast between these defects and the background on the surface of the control sheet after chemical mechanical polishing will not be high, which will lead to The capture rate of these defects by the optical scanning machine is low (that is, missed detection occurs), which affects the accuracy of defect monitoring in the chemical mechanical polishing process, which in turn leads to an increase in the defective rate of subsequent processed wafers

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