The invention discloses a method for detecting 
etching insufficiency of through holes. The method comprises the steps that a plurality of test modules are built on a 
semiconductor substrate, each test module simulates an SRAM device structure and comprises two 
simulation transmission gate transistors, two 
simulation pull-up transistors and two 
simulation pull-down transistors, the simulation 
transmission gate transistors, the simulation pull-up transistors and the simulation pull-down transistors are PMOS devices in an N well, and no grid 
electrode is formed on active areas of the simulation 
transmission gate transistors; a plurality of contacting holes are formed in each test module and filled with 
metal, and the contacting holes are at least connected with positions, corresponding to grid electrodes, in the active areas of the simulation transmission gate transistors; a 
metal interconnection line and a conduction through hole are formed on each contacting hole; the test modules are scanned through an 
electron beam defect 
scanner under a positive potential condition, and the 
etching insufficiency defects of the through holes of the test modules are detected according to the image feature pictures obtained through scanning. The method for detecting 
etching insufficiency of the through holes can effectively improve the capturing efficiency of the etching insufficiency defects.