The invention discloses a method for detecting
etching insufficiency of through holes. The method comprises the steps that a plurality of test modules are built on a
semiconductor substrate, each test module simulates an SRAM device structure and comprises two
simulation transmission gate transistors, two
simulation pull-up transistors and two
simulation pull-down transistors, the simulation
transmission gate transistors, the simulation pull-up transistors and the simulation pull-down transistors are PMOS devices in an N well, and no grid
electrode is formed on active areas of the simulation
transmission gate transistors; a plurality of contacting holes are formed in each test module and filled with
metal, and the contacting holes are at least connected with positions, corresponding to grid electrodes, in the active areas of the simulation transmission gate transistors; a
metal interconnection line and a conduction through hole are formed on each contacting hole; the test modules are scanned through an
electron beam defect
scanner under a positive potential condition, and the
etching insufficiency defects of the through holes of the test modules are detected according to the image feature pictures obtained through scanning. The method for detecting
etching insufficiency of the through holes can effectively improve the capturing efficiency of the etching insufficiency defects.