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30results about How to "Improve crawl rate" patented technology

Method for detecting under-etching and deficiency defect of through hole

The invention discloses a method for detecting the under-etching and the deficiency defect of a through hole. The method comprises the following steps of implementing a structure that a PMOS (P-channel metal oxide semiconductor) device is arranged in an N well; growing metal silicide on a wafer according to a normal process manufacturing procedure, forming a barrier layer, and depositing a first dielectric layer and a second dielectric layer between metals; sequentially forming a hard mask, a silicon oxide and an antireflection layer on the second dielectric layer, and a hard mask etching photomask on the antireflection layer, wherein a through hole etching photomask is used as the hard mask etching photomask; completely etching the antireflection layer, the silicon oxide and the hard mask by utilizing the hard mask etching photomask, and partially etching the second dielectric layer; removing the hard mask etching photomask, and filling the antireflection layer, the silicon oxide, the hard mask and the second dielectric layer; performing etching by utilizing the through hole etching photomask until the first dielectric layer is partially etched, and removing the through hole etching photomask; removing the antireflection layer and a material, wherein the material is filled in the antireflection layer, and is the same as that of the antireflection layer; and performing etching until the barrier layer is etched through.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Method for detecting etching insufficiency of through hole

The invention discloses a method for detecting etching insufficiency of through holes. The method comprises the steps that a plurality of test modules are built on a semiconductor substrate, each test module simulates an SRAM device structure and comprises two simulation transmission gate transistors, two simulation pull-up transistors and two simulation pull-down transistors, the simulation transmission gate transistors, the simulation pull-up transistors and the simulation pull-down transistors are PMOS devices in an N well, and no grid electrode is formed on active areas of the simulation transmission gate transistors; a plurality of contacting holes are formed in each test module and filled with metal, and the contacting holes are at least connected with positions, corresponding to grid electrodes, in the active areas of the simulation transmission gate transistors; a metal interconnection line and a conduction through hole are formed on each contacting hole; the test modules are scanned through an electron beam defect scanner under a positive potential condition, and the etching insufficiency defects of the through holes of the test modules are detected according to the image feature pictures obtained through scanning. The method for detecting etching insufficiency of the through holes can effectively improve the capturing efficiency of the etching insufficiency defects.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Detection method for under-etching of through holes

The invention discloses a detection method for under-etching of through holes. The method comprises the following steps: a plurality of test modules are built on the substrate of a semiconductor, each test module simulates an SRAM device structure and comprises two simulation transmission gate transistors, two simulation pull-up transistors and two simulation pull-down transistors; the simulation transmission gate transistors, the simulation pull-up transistors and the simulation pull-down transistors are NMOS devices in a P trap, and a grid electrode is not formed in the active area of each simulation transmission gate transistor; a plurality of contact holes filled with metal are formed in each test module; the contact holes are connected with the position, corresponding to the grid electrode, of the active area of each simulation transmission gate transistor at least; metal interconnecting wires and conductive through holes are formed in the contact holes; test modules are scanned under the positive potential condition by an electron beam defect scanner, and the defect of under-etching of through holes of the test modules is detected according to image characteristic patterns obtained through scanning. The method provided by the invention can increase the capturing rate of the defect of under-etching.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Traction drive type mulching film recycling machine

The invention discloses a traction drive type mulching film recycling machine. The traction drive type mulching film recycling machine comprises a machine frame and a film grabbing mechanism. The machine frame is provided with a car floor beam, a car top beam and a traction end connector. A film grabbing roller is arranged on the car floor beam through a bearing, a film connecting roller is installed on the car top beam through a bearing, film grabbing teeth are arranged on the outer surface of the film grabbing roller, film connecting teeth are arranged on the film connecting roller, and the film connecting teeth and the film connecting teeth are arranged in a straggled mode. A rotary shaft of a land wheel is provided with a first driving wheel and a second driving wheel which drive the film grabbing roller and the film connecting roller to rotate respectively. The number of the film grabbing times is increased, and the mulching film recycling machine is used for improving the film grabbing rate. A speed difference exists between the film grabbing roller and the film connecting roller, so that multiple coincidence chances exist between the film grabbing teeth and the film connecting teeth, and the film connecting success rate is increased. Upward oblique or bent film connecting transition plate avoiding grooves can go deep between the film connecting teeth, and film residues between the film connecting teeth are shoveled out and then slide down to a film discharging channel.
Owner:HENAN AGRICULTURAL UNIVERSITY +1

Vertical chip capacitor and manufacturing process thereof

The invention discloses a vertical chip capacitor and a manufacturing process thereof, and belongs to the technical field of microelectronics. The capacitor comprises a capacitor substrate, the capacitor substrate comprises an upper end face and a lower end face, inner electrodes are arranged on the inner side of the upper end face and the lower end face, the inner electrodes comprise upper electrodes and lower electrodes, the upper electrodes and the lower electrodes are vertically arranged in a scattered mode, one ends of the upper electrodes are connected with the upper end face, the otherends of the upper electrodes are not in contact with the lower end face, the lower electrodes are connected with the lower end face, and the other ends of the lower electrodes are not in contact withthe upper end face; metal layers are arranged on the outer sides of the upper end face and the lower end face to form external terminal electrodes, and the terminal electrodes are parallel to an installation surface and are connected with the inner electrodes. According to the capacitor, an inner structure of the capacitor is improved to solve the capacitor application problem in a thinned and small-sized sealing member, and the capacitor is vertically arranged, so that sacrifice does not needed on a framework to ensure completeness of the framework, and meanwhile the purposes of changing capacitor shape and electrode direction are achieved by changing a printing technology, a cutting method and a coating technology of the electrodes.
Owner:山东芯诺电子科技股份有限公司

Full-flexible bionic pneumatic manipulator based on branch-imitating structure

A full-flexible bionic pneumatic manipulator based on a bionic branch structure comprises a pneumatic driving unit and manipulator units controlled independently, each manipulator unit comprises a shell with the overall shape of a bionic branch structure, and at least one surface of the shell in the length direction is of a zigzag structure; the inner part of the shell is provided with a cavity with a consistent shape, a strain limiting layer is also laminated on the surface of the shell at a position opposite to the zigzag structure, the shell and the strain limiting layer are both made of flexible materials, and the strain limiting layer is made of flexible materials of which the Young modulus is greater than that of the cavity; the shell and the cavity of the bionic branch structure are each composed of a first-stage main branch part and a plurality of stages of branch parts, the number of branches of the multiple stages of branch parts is gradually increased according to a preset rule, and the cavity of the branch of each branch part is connected with the pneumatic driving unit and is independent of the pneumatic driving unit. According to the robot, more types of objects can be stably, nondestructively and flexibly grabbed, the response time is shorter, the deformation process is faster, and the grabbing speed is higher.
Owner:ANHUI UNIVERSITY

Grab bucket

InactiveCN111847234AFirmly connectedExpand the range of opening and closingCleaning using toolsLoad-engaging elementsElectric machineryEngineering
The invention relates to a grab bucket. The grab bucket comprises a pair of bucket bodies matched with each other, support rods are arranged at both ends of the bucket bodies, the other ends of the support rods are fixed to a mounting seat, the support rods are fixed through buffer rods, the buffer rods are connected with hydraulic rods, the hydraulic rods are connected with a fixing device, the fixing device is fixed to the bottom of the mounting seat, the side of the mounting seat is connected with the support rods through rotating shafts, limit blocks are arranged at both ends of the rotating shafts, cleaning devices are arranged on the fixing device, a motor is arranged on the mounting seat, and the motor is connected with a speed stabilizer. The grab bucket is high in degree of automation with compression resistance, shock absorption, wear resistance and rust prevention, work accuracy and efficiency are improved, and the opening range of the bucket bodies is further increased through the hydraulic rods; the use of hydraulic connecting rods and the combination of sprockets effectively strengthen the stability of the structure; the use of the cleaning devices can effectively strengthen cleaning of the bucket bodies, increase the accuracy of works, and avoid mixing of materials.
Owner:MAANSHAN ZHONGTIAN MACHINERY INSTALLED

A method for detecting insufficient etching of through holes

The invention discloses a method for detecting etching insufficiency of through holes. The method comprises the steps that a plurality of test modules are built on a semiconductor substrate, each test module simulates an SRAM device structure and comprises two simulation transmission gate transistors, two simulation pull-up transistors and two simulation pull-down transistors, the simulation transmission gate transistors, the simulation pull-up transistors and the simulation pull-down transistors are PMOS devices in an N well, and no grid electrode is formed on active areas of the simulation transmission gate transistors; a plurality of contacting holes are formed in each test module and filled with metal, and the contacting holes are at least connected with positions, corresponding to grid electrodes, in the active areas of the simulation transmission gate transistors; a metal interconnection line and a conduction through hole are formed on each contacting hole; the test modules are scanned through an electron beam defect scanner under a positive potential condition, and the etching insufficiency defects of the through holes of the test modules are detected according to the image feature pictures obtained through scanning. The method for detecting etching insufficiency of the through holes can effectively improve the capturing efficiency of the etching insufficiency defects.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Method for Detecting Via Underetch and Via Missing Defects

The invention discloses a method for detecting the under-etching and the deficiency defect of a through hole. The method comprises the following steps of implementing a structure that a PMOS (P-channel metal oxide semiconductor) device is arranged in an N well; growing metal silicide on a wafer according to a normal process manufacturing procedure, forming a barrier layer, and depositing a first dielectric layer and a second dielectric layer between metals; sequentially forming a hard mask, a silicon oxide and an antireflection layer on the second dielectric layer, and a hard mask etching photomask on the antireflection layer, wherein a through hole etching photomask is used as the hard mask etching photomask; completely etching the antireflection layer, the silicon oxide and the hard mask by utilizing the hard mask etching photomask, and partially etching the second dielectric layer; removing the hard mask etching photomask, and filling the antireflection layer, the silicon oxide, the hard mask and the second dielectric layer; performing etching by utilizing the through hole etching photomask until the first dielectric layer is partially etched, and removing the through hole etching photomask; removing the antireflection layer and a material, wherein the material is filled in the antireflection layer, and is the same as that of the antireflection layer; and performing etching until the barrier layer is etched through.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP

Traction-driven mulch recycling machine

The invention discloses a traction drive type mulching film recycling machine. The traction drive type mulching film recycling machine comprises a machine frame and a film grabbing mechanism. The machine frame is provided with a car floor beam, a car top beam and a traction end connector. A film grabbing roller is arranged on the car floor beam through a bearing, a film connecting roller is installed on the car top beam through a bearing, film grabbing teeth are arranged on the outer surface of the film grabbing roller, film connecting teeth are arranged on the film connecting roller, and the film connecting teeth and the film connecting teeth are arranged in a straggled mode. A rotary shaft of a land wheel is provided with a first driving wheel and a second driving wheel which drive the film grabbing roller and the film connecting roller to rotate respectively. The number of the film grabbing times is increased, and the mulching film recycling machine is used for improving the film grabbing rate. A speed difference exists between the film grabbing roller and the film connecting roller, so that multiple coincidence chances exist between the film grabbing teeth and the film connecting teeth, and the film connecting success rate is increased. Upward oblique or bent film connecting transition plate avoiding grooves can go deep between the film connecting teeth, and film residues between the film connecting teeth are shoveled out and then slide down to a film discharging channel.
Owner:HENAN AGRICULTURAL UNIVERSITY +1

A method for detecting insufficient etching of through holes

The invention discloses a detection method for under-etching of through holes. The method comprises the following steps: a plurality of test modules are built on the substrate of a semiconductor, each test module simulates an SRAM device structure and comprises two simulation transmission gate transistors, two simulation pull-up transistors and two simulation pull-down transistors; the simulation transmission gate transistors, the simulation pull-up transistors and the simulation pull-down transistors are NMOS devices in a P trap, and a grid electrode is not formed in the active area of each simulation transmission gate transistor; a plurality of contact holes filled with metal are formed in each test module; the contact holes are connected with the position, corresponding to the grid electrode, of the active area of each simulation transmission gate transistor at least; metal interconnecting wires and conductive through holes are formed in the contact holes; test modules are scanned under the positive potential condition by an electron beam defect scanner, and the defect of under-etching of through holes of the test modules is detected according to image characteristic patterns obtained through scanning. The method provided by the invention can increase the capturing rate of the defect of under-etching.
Owner:SHANGHAI HUALI MICROELECTRONICS CORP
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