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A method for detecting insufficient etching of through holes

A technology for through-hole etching and detection methods, which is applied in semiconductor/solid-state device testing/measurement, electrical components, semiconductor/solid-state device manufacturing, etc. The effects of manufacturing and yield improvement guarantee, improvement of capture rate, and improvement of monitoring sensitivity

Active Publication Date: 2017-03-01
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Therefore, the above two detection methods for insufficient via etching have great shortcomings, and it is difficult to provide an effective reference for the optimization of the online process window

Method used

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  • A method for detecting insufficient etching of through holes
  • A method for detecting insufficient etching of through holes
  • A method for detecting insufficient etching of through holes

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Embodiment 1

[0039] image 3 A schematic flowchart of a method for detecting insufficient etching of via holes provided in this embodiment. Such as image 3 As shown, the detection method includes steps:

[0040] Step S1: Build a plurality of test modules on the semiconductor substrate, each test module simulates the SRAM device structure, wherein the transistors in the test module are all PMOS devices in the N well and no gate is formed on the active region of the simulated transmission gate transistor pole.

[0041] Specifically, since each test module simulates a SRAM device structure, each test module includes 2 analog pass-gate transistors, two pull-up transistors and two pull-down transistors. Unlike the SRAM device structure, the These transistors are all PMOS devices in N-well. In addition, another difference of the present invention is that the analog pass-gate transistor only has an active area without forming a gate on the active area.

[0042] The formation method of this ...

Embodiment 2

[0053] Although the above-mentioned embodiment can increase the detection via hole ( Figure 2b In the case of etching at A), but for multiple vias connected by the same metal interconnection line, such as Figure 2b In the B area, if some of the through holes are under-etched, it will still not be detected. Therefore, in order to further increase the number of detectable vias, this embodiment improves the method for forming vias and metal interconnection lines.

[0054] Please refer to Figure 5a to Figure 5g , which is a schematic diagram of each step of the method for forming conductive vias and metal interconnections in this embodiment. In this embodiment, the steps of establishing test modules, forming a plurality of contact holes on each test module and filling metal are the same as those in the first embodiment, and will not be repeated here.

[0055] Please refer to Figure 5a and Figure 5b After the contact hole is formed, filled with metal and planarized, a die...

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Abstract

The invention discloses a method for detecting etching insufficiency of through holes. The method comprises the steps that a plurality of test modules are built on a semiconductor substrate, each test module simulates an SRAM device structure and comprises two simulation transmission gate transistors, two simulation pull-up transistors and two simulation pull-down transistors, the simulation transmission gate transistors, the simulation pull-up transistors and the simulation pull-down transistors are PMOS devices in an N well, and no grid electrode is formed on active areas of the simulation transmission gate transistors; a plurality of contacting holes are formed in each test module and filled with metal, and the contacting holes are at least connected with positions, corresponding to grid electrodes, in the active areas of the simulation transmission gate transistors; a metal interconnection line and a conduction through hole are formed on each contacting hole; the test modules are scanned through an electron beam defect scanner under a positive potential condition, and the etching insufficiency defects of the through holes of the test modules are detected according to the image feature pictures obtained through scanning. The method for detecting etching insufficiency of the through holes can effectively improve the capturing efficiency of the etching insufficiency defects.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a method for detecting insufficient etching of through holes. Background technique [0002] With the development of integrated circuit technology and the scaling down of critical dimensions, the etching of copper connection vias in the back-end process of semiconductor devices is insufficient (such as figure 1 Shown) and via missing defects are increasingly becoming one of the bottlenecks hindering the development of integrated circuits. For example, in the etching process of first etching the hard mask (Hard Mask Etch) and then etching the through hole (All in One Etch), the under-etching defects are often affected by the cleaning process after the hard mask etching, the via etching itself and the via etching. The common influence of the photolithography process, when some of the process windows are not optimized enough, defects will appear, which becomes a major killer...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L21/76804H01L21/76898H01L22/12
Inventor 范荣伟陈宏璘龙吟顾晓芳倪棋梁
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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