A composite microwave absorbing material using a nail hole matching mode and a preparation method thereof
A technology of composite absorbing materials and matching methods, applied in electrical components, magnetic field/electric field shielding, etc., can solve the problems of insufficient absorbing performance improvement, limited design parameters, single research factors, etc., and achieve improved absorbing performance and design space. Large, wide-ranging effects
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Embodiment 1
[0036] In this embodiment, round-headed or hexagonal headless nails and straight-through holes are used, and the nails use wave-transparent SiC f / Si 3 N 4 Composite material, substrate with through holes using absorbing SiC f / Si 3 N 4 composite material. The structural parameters of the nail-hole fit are p=5.0mm, d=a 1 =a 2 = 3.0 mm, l = h = 3.0 mm, k = 0.0 mm, which will be referred to as the nail-hole fitting structure 1 .
[0037] In this example, the reflection loss curves of the wave-absorbing substrate with no nail-hole matching structure and the nail-hole matching structure with a thickness of 3.0mm are as follows image 3 shown. Frequency range from 8 to 18GHz: The minimum reflection loss of the material without the nail-hole matching structure is -11.24dB, and the minimum reflection loss of the material with the nail-hole matching structure is -19.10dB, that is, the strongest absorbing efficiency is increased by 69.9%; The maximum reflection loss of the mat...
Embodiment 2
[0039] In this embodiment, round-head nails and straight blind holes are used, and the nails use wave-absorbing SiC f / Si 3 N 4 Composite material, substrate with blind vias using wave-transparent SiC f / Si 3 N 4 composite material. The structural parameters of the nail-hole fit are p=5.0mm, d=2.0mm, a 1 = 3.0 mm, l = 4.0 mm, h = 5.0 mm, k = 2.0 mm, which will be referred to as the nail-hole fitting structure 2 .
[0040] The reflection loss curves of the wave-transparent substrate with no nail-hole matching structure and the nail-hole matching structure in this embodiment are as follows Figure 4 shown. Frequency range from 8 to 18GHz: The minimum reflection loss of the material is -0.85dB when there is no nail-hole matching structure, and the minimum reflection loss of the material with nail-hole matching structure is -5.6dB, that is, the strongest wave-absorbing performance is improved; no nail hole The maximum reflection loss of the material with the matching struc...
Embodiment 3
[0042] In this embodiment, round-head nails and straight blind holes are used, and the nails use wave-absorbing SiC f / EP composite material, substrate with blind vias in reflective SiC f / EP composite material. The structural parameters of the nail-hole fit are p=30mm, d=20mm, a 1 = 20 mm, l = 15 mm, h = 15, k = 5.0 mm, which is called the nail-hole fitting structure 3 .
[0043] In this embodiment, the reflection loss curves of the reflective substrate without the nail-hole matching structure and the nail-hole matching structure with a thickness of 15 mm are as follows Figure 5 shown. Frequency range from 8 to 18GHz: The reflection loss of the material without the nail-hole matching structure is about -2.01dB, and the minimum reflection loss of the material with the nail-hole matching structure is -40.93dB, that is, the strongest wave-absorbing efficiency has increased by 1936.3%. The maximum reflection loss is -6.09dB, that is, the weakest absorbing efficiency is incre...
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