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Ion implanter and ion beam control method

A control method and ion beam technology, which is applied in the direction of discharge tubes, electrical components, circuits, etc., can solve the problems of low ion implantation productivity and inability to control the ion beam throughput, so as to reduce costs, improve linearity and energy uniformity, Drive flexible and precise effects

Active Publication Date: 2019-01-11
淮安西德工业设计有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] During the ion implantation process, multiple processes are required. However, the angle between the opening of the existing beam stopper and the incident direction of the ion beam is switched between 0° and 90°, which can only control the passage of the ion beam. off, unable to control ion beam throughput
When the procedure in the ion implantation process changes, the machine parameters need to be reset for each procedure change, and the productivity of ion implantation is low

Method used

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  • Ion implanter and ion beam control method
  • Ion implanter and ion beam control method
  • Ion implanter and ion beam control method

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Experimental program
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Effect test

Embodiment approach 1

[0046] The first embodiment of the present invention provides a method for controlling ion beams. It is not necessary to reset the machine parameters in each process, and it can flexibly adapt to different processes by controlling the rotation angle of the beam stopper 2 in different processes. Changes in the process, increase production capacity, and reduce costs.

[0047] Specifically, see Figure 1-Figure 4 As shown, the control method of the ion beam includes the following steps:

[0048] Step S1: The ion beam emitted from the ion source 1 reaches the accelerator 3, and the accelerator 3 accelerates the passing ion beam to obtain a high-speed ion beam;

[0049] Step S2: The accelerated ion beam reaches the beam blocker 2, and the controller 100 controls the channel 6 of the beam blocker 2 to be in a closed state or an open state relative to the ion beam;

[0050] Step S3: the current measuring device 4 measures the current of the ion beam passing through the beam blocker...

Embodiment approach 2

[0069] The second embodiment of the present invention provides an ion implanter. By using the ion implanter in the second embodiment, it is not necessary to reset the machine parameters in each process. By controlling the beam blocker 2 in different processes The rotation angle in the middle can flexibly adapt to the changes of different processes, increase production capacity and reduce costs.

[0070] combine image 3 and Figure 4 From the point of view, the ion implanter of the present invention includes a controller 100, an ion source 1, a beam blocker 2, an accelerator 3 and a current measuring device 4, and the ion source 1, the beam blocker 2, the accelerator 3 and the current measuring device 4 are all Communicatively connected with the controller 100. In this embodiment, the ion source 1 , the accelerator 3 , the beam stopper 2 , the current measuring device 4 and the process chamber 5 are arranged in the order of ion beam flow.

[0071] The current measurement de...

Embodiment approach 3

[0085] The third embodiment of the present invention provides an ion implanter, the third embodiment is a further improvement on the second embodiment, the main improvement is that in the third embodiment of the present invention, combined Figure 6 It can be seen that the area between the ion source 1 and the beam stopper 2 is formed as a low beam current conversion area 9, and the low beam current conversion area 9 can convert the direction of the passing ion beam. The area between the accelerator 3 and the process chamber 5 is formed as a high beam conversion region 10, which can convert the direction of the passing ion beam. Both the low beam current conversion area 9 and the high beam current conversion area 10 use a magnetic field to convert the direction of the ion beam.

[0086] There is also a homing module 11 in the controller 100. After each ion implantation process is finished, the homing module 11 of the controller 100 works so that the channel 6 of the beam stopp...

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Abstract

The invention relates to the technical field of ion implantation. Disclosed are an ion implanter and an ion beam control method. In the ion beam control method, a current measuring device measures thecurrent of the ion beam passing through and converts the measured current into a current signal and sends the current signal to a controller. The controller compares the current signal with a presetcurrent parameter. When the current signal is different from the preset current parameter, the controller controls the beam blocker to rotate to change the ion beam throughput of the ion beam. According to the invention, the parameters of the machine table need not be reset, and the ion beam throughput can be controlled by controlling the rotation of the beam blocker, so as to flexibly adapt to the changes of different working procedures, improve the productivity and reduce the cost.

Description

technical field [0001] The invention relates to the technical field of ion implantation, in particular to an ion implanter and an ion beam control method. Background technique [0002] Ion implantation is a new generation of material surface treatment technology, which is widely used in semiconductor manufacturing technology. Specifically, in the semiconductor manufacturing process, ion implantation equipment (i.e., ion implanter, ion implanter) is used to implant dopants in a specific region of the semiconductor device in the form of ions using ion implantation technology, so as to obtain Precise electronic properties. During the ion implantation process, the ions must first be accelerated to have sufficient energy and speed to penetrate (implant) the film and reach a predetermined implantation depth. The ion implantation process can precisely control the dopant concentration in the implanted area, wherein the dopant concentration (dose) is determined by the ion beam curr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01J37/244H01J37/15
CPCH01J37/15H01J37/244H01J37/3171
Inventor 汪红红洪纪伦吴宗祐林宗贤
Owner 淮安西德工业设计有限公司
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