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A method for sealing the back side of a wafer

A wafer and backside technology, which is applied in the field of wafer backside sealing, can solve problems such as self-doping of epitaxial wafers, and achieve the effect of preventing self-doping and being easy to implement

Inactive Publication Date: 2019-01-15
ZING SEMICON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the prior art described above, the purpose of the present invention is to provide a method for sealing the back of the wafer, which is used to solve the problem of self-doping in the prior art when epitaxial wafers occur

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  • A method for sealing the back side of a wafer

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Embodiment Construction

[0020] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, in the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.

[0021] It should be noted that the diagrams provided in the following embodiments are only schematically illustrating the basic ideas of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the compo...

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Abstract

The invention provides a method for sealing the back side of a wafer, comprising the following steps: providing a wafer substrate which polishes the double sides, edges and cuts; Forming a polysiliconlayer on the back surface of the wafer substrate; Removing polycrystalline silicon at the oblique angle of the back edge of the wafer substrate by an edge oxide polishing method; performing frontal polishing and cleaning on the wafer substrate. The method for sealing the back side of a wafer substrate before the epitaxial lay is grown on the wafer substrate can effectively prevent the self-dopingproblem when the epitaxial wafer is grown, and the method is easy to implement, simple and practical.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for sealing the back of a wafer. Background technique [0002] Growing epitaxial layers with precisely defined electrical and physical properties on the front side of the wafer is the initial step in fabricating various devices on the wafer. In order to grow the epitaxial layer, the wafer is usually placed in the epitaxial reaction chamber with the support of the base, and the temperature of the reaction chamber is raised, for example, to 800-1150 degrees Celsius, and the reaction gas is introduced to make the gas react with the wafer, and the wafer is formed on the front side of the wafer. Form the epitaxial layer. To grow a layer of crystalline silicon on a silicon wafer, a silane gas, such as trichlorosilane (TCS), is passed through the front side of the silicon wafer. [0003] Before the epitaxial layer is deposited on the front side of the wafer, in order t...

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02016H01L21/02123H01L21/0226
Inventor 肖德元
Owner ZING SEMICON CORP
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