Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for back sealing wafer

A wafer and backside technology, which is applied in the field of backside sealing wafers, can solve the problems of self-doping of epitaxial wafers, and achieve the effect of preventing self-doping and being easy to implement

Inactive Publication Date: 2019-01-15
ZING SEMICON CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the prior art described above, the purpose of the present invention is to provide a method for back sealing a wafer, which is used to solve the problem of self-doping in the prior art when epitaxial wafers occur

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for back sealing wafer
  • Method for back sealing wafer
  • Method for back sealing wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, in the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.

[0022] It should be noted that the diagrams provided in the following embodiments are only schematically illustrating the basic ideas of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the compo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for back sealing a wafer, which comprises the following steps of: providing a wafer substrate for completing double-sided, edge and cut polishing; Forming an oxide layer on the back surface of the wafer substrate; Removing the oxide layer at the oblique angle of the back edge of the wafer substrate by an edge oxide polishing method; Frontal polishing and cleaning are performed on the wafer substrate. The method for back sealing the wafer substrate before the epitaxial lay is grown on the wafer substrate can effectively prevent the self-doping problem when the epitaxial wafer is grown, and the method is easy to implement, simple and practical.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for back sealing a wafer. Background technique [0002] Growing epitaxial layers with precisely defined electrical and physical properties on the front side of the wafer is the initial step in fabricating various devices on the wafer. In order to grow the epitaxial layer, the wafer is usually placed in the epitaxial reaction chamber with the support of the base, and the temperature of the reaction chamber is raised, for example, to 800-1150 degrees Celsius, and the reaction gas is introduced to make the gas react with the wafer, and the wafer is formed on the front side of the wafer. Form the epitaxial layer. To grow a layer of crystalline silicon on a silicon wafer, a silane gas, such as trichlorosilane (TCS), is passed through the front side of the silicon wafer. [0003] Before the epitaxial layer is deposited on the front side of the wafer, in order to preve...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/56
CPCH01L21/56
Inventor 肖德元
Owner ZING SEMICON CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com