52results about How to "Improve resistance uniformity" patented technology

The present invention discloses a method for preparing an indium tin oxide (ITO) film on a resin substrate by using magnetron sputtering. The method comprises the following concrete steps: a, placing a resin substrate in a loading chamber of a magnetron sputtering device, carrying out vacuum pumping after sealing; b, conveying the resin substrate to a heating chamber, heating the substrate to a temperature of 150-250 DEG C; c, conveying the heated resin substrate to a sputtering chamber, adopting magnetron sputtering manner to carry out ITO film deposition, wherein the cathode direct current power supply input power in the sputtering chamber is 0.6-6 KW according to different ITO surface resistance values; d, conveying the film-coated substrate to a cooling chamber to carry out cooling; e, placing the cooled substrate in an unloading chamber, and unloading the substrate. With adopting the process method, the continuous vertical magnetron sputtering method is adopted for preparing the low-resistivity and high-quality ITO film on the resin substrate, and the prepared ITO film has performances of good resistance uniformity, low resistivity, high transmittance, good chemical stabilityand the like.

The invention discloses an ultra-narrow-row cotton planting method, which is characterized in that in the sowing stage of cotton planting, line spacing of wide rows is controlled to be 70-72cm, line spacing of narrow rows is controlled to be 4-6cm, i.e. an ultra-narrow-row dual-seedling-belt planting mode with line spacing combination of 70-72cm and 4-6cm is adopted, plants between every two narrow rows are in staggered distribution, i.e. triangular distribution, and plant distance of the plants is controlled to be 10-16cm. Compared with the prior art, since the method adopts the ultra narrow row of 4-6cm, but due to the adoption of the triangular distribution between the plants between every two narrow rows, the actual plant distance is enabled to be above 7cm, and the uniform distribution of nutritions of the plants is ensured; and growth difference between adjacent plants is smaller, so that defoliation ripening agent is more uniformly sprayed during harvesting, the defoliating effect is good, the resistance uniformity is good when a mechanical picking head is inserted into cotton plants, and the clear picking rate is generally improved by more than one percentage point during mechanical picking.

A transfer belt that contains carbon black A, that is acidic carbon black having a pH value of not more than 6 or basic carbon black having a pH value of not less than 8; resin B, that is a polymer capable of serving as an electron-pair donator or as an electron-pair acceptor with respect to carbon black A; and resin C, that is a polymer which neither serves as an electron-pair donator, nor serves as an electron-pair acceptor, with respect to carbon black A, and a full color image-forming apparatus, comprising the above transfer belt, and and a full color image-forming apparatus equipped with the belt.

The invention belongs to the technical field of conductive inks and particularly relates to a carbon fiber/gaseous carbon tube/carbon black compound conductive ink and a preparation method thereof. The carbon fiber/gaseous carbon tube/carbon black compound conductive ink is composed of, by weight part, 0.1-10 parts of carbon fiber/gaseous carbon tube compound powder, 0.1-20 parts of carbon black,0.1-70 parts of resin adhesives, 0.1-5 parts of dispersant, 0.1-5 parts of flatting agent, 0.1-5 parts of anti-settling agent and 0.1-5 parts of water-repellent agent. The carbon fiber/gaseous carbontube/carbon black compound conductive ink has the advantages of being high in adhesion force, electric conductivity, water resistance, alcohol resistance and the like and achieves uniform conductive uniformity and application attenuation resistance; meanwhile, the carbon fiber/gaseous carbon tube/carbon black compound conductive ink can be applied widely as heating carbon paste, conductive carbonpaste and electromagnetic shielding carbon paste to heating floors, PCB (printed circuit board) carbon oil, electromagnetic shielding coatings and the like.

The invention discloses a preparation method of a heating chip with fused nanometer carbon fibers and wood fibers. The carbon fibers are sufficiently separated in water through aqueous dispersant. Bymeans of an acid-base balance neutralizing characteristic, a carbon fiber material and a vegetable fiber material are sufficiently fused, and filling of vegetable fiber pores by nanometer-grade graphite conductive particles is realized. The preparation method is characterized in that a specific rule is formed in a fiber material manufacturing process through a current flow direction function, so that resistance uniformity of the heating chip is greatly improved and higher stability is realized.

The invention discloses a substrate. The substrate comprises a substrate body and is characterized in that a first silicon dioxide layer is arranged at the back side of the substrate body; a polycrystalline silicon layer is arranged on the surface of the first silicon dioxide layer; and a second polycrystalline silicon layer is arranged on the surface of the polycrystalline layer. The invention has another advantage of being capable of improving the flatness of an epitaxial wafer and increasing the resistivity uniformity of an epitaxial layer.

A gas diffusion electrode includes: a water-repellent layer which includes a woven fabric or a non-woven fabric, and which has water repellency; a gas diffusion layer which is stacked on the water-repellent layer; and a catalyst layer which is disposed opposite the water-repellent layer relative to the gas diffusion layer.

The invention belongs to the technical field of the underfloor heating slurry, and specifically relates to a composite graphene underfloor heating slurry and a preparation method thereof. The composite graphene underfloor heating slurry is prepared from the following raw materials in parts by weight: 0.1-30 parts of carbon fiber/graphene/carbon microsphere powder, 0.1-70 parts of a matrix bindingmaterial, 0.1-5 parts of a dispersing agent, 0.1-5 parts of a flatting agent, 0.1-5 parts of a precipitator, and 0.1-1 part of a defoaming agent. The composite graphene underfloor heating slurry prepared by adopting the carbon fiber/graphene/carbon microsphere powder has characteristics of good adhesive force, high conductivity, water resistance and alcohol resistance, and has excellent conductiveuniformity, and attenuation resistance.

An array substrate is disclosed. The array substrate comprises a substrate, a plurality of common electrodes formed on the substrate, a plurality of gate signal lines formed above the common electrodes, and a plurality of common electrode signal line units corresponding to the plurality of common electrodes, respectively. The plurality of common electrode signal line units are formed on the corresponding common electrodes, respectively. Each of the common electrode signal line units comprises a first common electrode signal line perpendicular to the gate signal line and a second common electrode signal line parallel to the gate signal line. The first and second common electrode signal lines are made of metal and cross with each other and are electrically connected to each other. Two adjacent common electrode signal line units are electrically connected by a bridge line. The present disclosure also relates to a method for manufacturing the array substrate and a display apparatus.

The invention discloses a heating bearing platform of a laser annealing machine table. A synchronously-moving combined heating bearing platform body is formed by arranging a second heating bearing platform body on the periphery of a first heating bearing platform in a surrounding mode. Heating is independently carried out through heating units arranged on the first heating bearing platform body and the second heating bearing platform body respectively, the heating temperature of the second heating bearing platform body is higher than that of the first heating bearing platform body, the heat dissipation temperature loss of a silicon wafer edge area borne by the first heating bearing platform body and the second heating bearing platform body can be offset, the preheating temperature of the silicon wafer edge area is increased, and therefore the phenomenon that when the laser annealing technology is carried out, the square resistance value is relatively high due to the low silicon wafer edge temperature is eliminated, and the improvement of the on-chip resistance in a silicon wafer and the overall device performance are improved.

The invention discloses a method for producing a novel substrate. The novel substrate comprises a substrate body and is characterized in that: the surface of the substrate body is provided with a monocrystalline silicon layer; and the monocrystalline silicon layer is formed by depositing monocrystalline silicon which is generated by reacting trichlorosilane and hydrogen at the temperature of between 900 and 1,050 DEG C on the surface of the substrate body. The resistance uniformity of the epitaxial wafer which is produced by using the novel substrate is less than 1.5 percent. Compared with the epitaxial wafer which is not produced by using the novel substrate, the epitaxial wafer has the advantages that the resistance uniformity value of the epitaxial wafer can be reduced by 1 percent. By using the novel substrate, the subsequent production cost can be reduced and product quality can be improved.

The invention belongs to the technical field of nickel-chromium high-resistance electrothermal alloys, and particularly relates to a nickel-chromium high-resistance electrothermal alloy and a preparation method thereof. The technical problem to be solved is to provide the nickel-chromium series high-resistance electrothermal alloy which is long in service life and excellent in mechanical property under a high-temperature condition and the preparation method of the nickel-chromium series high-resistance electrothermal alloy. The nickel-chromium series high-resistance electrothermal alloy comprises the following chemical components including, by weight, less than or equal to 0.08% of C, 0.75%-1.60% of Si, less than or equal to 0.50% of Al, 20.0%-23.0% of Cr, less than or equal to 0.6% of Mn, less than or equal to 1.0% of Fe, less than or equal to 0.020% of P, less than or equal to 0.015% of S, 0.10%-0.30% of W, 0.20%-0.50% of Co, 0.10%-0.25% of Zr and the balance Ni and inevitable impurities. The nickel-chromium series high-resistance electrothermal alloy is small in expansion coefficient, good in resistance uniformity and long in service life.

The invention discloses silver nanowire-silver complex composite conductive ink which comprises silver nanowire ink and silver complex ink, wherein the silver nanowire ink accounts for 80-95 wt%, and the silver complex ink accounts for 5-20 wt%; the silver nanowire ink comprises a silver nanowire and a dispersing agent, the silver nanowire accounts for 0.5-5 wt%, and the dispersing agent accounts for 95-99.5 wt%; and the silver complex ink comprises a silver complex and a stabilizer, the silver complex accounts for 5-10 wt%, and the stabilizer accounts for 90-95wt%. According to the silver nanowire-silver complex composite conductive ink disclosed by the invention, the preservation period of the composite conductive ink can be prolonged, industrialized production is easily realized, the conductivity and uniformity of the formed film are improved, the speed of separating out the silver nanowire in the silver nanowire ink can be effectively reduced, and the silver nanowire is prevented from being agglomerated and settled; and meanwhile, the resistance uniformity of the silver nanowire after film formation can be increased.

The invention provides a doping method, a single crystal device and a single crystal furnace. The method comprises the following steps: adding a dopant with a first preset mass into a silicon melt before a current monocrystalline silicon rod is drawn; detecting the growth length of the current monocrystalline silicon rod in a drawing process of the current monocrystalline silicon rod; and adding adopant proportional to a second preset mass into the silicon melt when the growth length of the current monocrystalline silicon rod meets a preset condition. According to the invention, addition of the dopant and drawing of the current monocrystalline silicon rod can be carried out synchronously; in the drawing process of the monocrystalline silicon, the dopant is added into the silicon melt whenthe growth length of the current monocrystalline silicon rod meets the preset condition; and due to centripetal force generated by rotation of a crucible, the dopant can be uniformly distributed on the surface of the silicon melt, so that uniformity of the dopant in each part of a drawn current monocrystalline silicon rod is ensured, resistance uniformity of the prepared current monocrystalline silicon rod is improved, and then the actual yield of the current monocrystalline silicon rod is improved.

The invention discloses a glass thinning and coating method, which comprises the following steps of: fixing a substrate on a substrate frame, feeding the substrate frame into an inlet chamber, sealing, and performing low-vacuum pumping; feeding the substrate frame into an inlet buffer chamber, and carrying out high-vacuum pumping; then feeding the substrate frame into an inlet conveying chamber, preheating the substrate under high vacuum; sending the substrate frame into a process chamber, carrying out coating treatment, heating the substrate during coating, and keeping the temperature of thesubstrate at 150-250 DEG C; and sending the coated substrate out. The invention further discloses glass thinning and coating equipment which sequentially comprises an inlet chamber, an inlet buffer chamber, an inlet conveying chamber, a process chamber, an outlet conveying chamber, an outlet buffer chamber and an outlet chamber, the equipment further comprises a vacuum pump, the vacuum pump is a molecular pump, and the molecular pump is mounted on a door plate; and the inlet buffer chamber, the inlet conveying chamber, the process chamber, the outlet conveying chamber and the outlet buffer chamber are all provided with heating devices.