ATO target precursor and preparation method and application thereof

A technology of precursors and targets, which is applied in the field of ATO target precursors and its preparation, can solve the problems of obvious difference in electric field strength, influence on liquid crystal deflection, and inability to completely offset them, and achieve excellent resistance uniformity and high optical transmittance Effect

Pending Publication Date: 2021-12-24
长沙壹纳光电材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The image sticking problem has become the main factor affecting display performance. The image sticking is mainly due to the uneven distribution of electric field intensity caused by the low resistance characteristics of the ITO (indium tin oxide) film in the device (too low resistance will cause alternating electric fields in the repeated response process. , will affect the deflection of the liquid crystal
), the electric field intensity difference on both sides of the edge is obvious and cannot be completely canceled out.

Method used

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  • ATO target precursor and preparation method and application thereof
  • ATO target precursor and preparation method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] This embodiment is a method for preparing an ATO target, comprising the following steps:

[0053] S1. Prepare powder with tin chloride and antimony oxide at a weight ratio of 98.2:1.8, put the powder into a ball mill for ball milling for 1 hour, and filter and dry the milled slurry at a drying temperature of 120°C. The time is 10h, and the BET is 10m 2 / g of ATO target precursor;

[0054] S2. ATO powder is obtained after spraying and granulating the ATO target precursor, and the D50 is 10 μm.

[0055] S3. The ATO powder is molded under a pressure of 0.4 MPa, and then cold isostatic pressing (10 min) is performed at a pressure of 350 MPa to obtain a blank target material.

[0056] S4. Degrease the blank target at 500°C, and sinter at 1200°C after degreasing to obtain an ATO target (the mass ratio of tin oxide to antimony oxide in the target is 98.2:1.8); where, the degreasing temperature The heating rate is 1°C / min, and it is kept for 5 hours after heating up to 500°C...

Embodiment 2

[0060] This embodiment is a method for preparing an ATO target (adjusting the mass ratio of tin chloride and antimony oxide to 99.5:0.5), including the following steps:

[0061] S1. Prepare powder with tin chloride and antimony oxide at a weight ratio of 99.5:0.5, put the powder into a ball mill for ball milling for 1 hour, and filter and dry the milled slurry at a drying temperature of 120°C. The time is 10h, and the BET is 11m 2 / g of ATO target precursor;

[0062] S2. ATO powder is obtained after spraying and granulating the ATO target precursor, and the D50 is 10 μm.

[0063] S3. The ATO powder is molded under a pressure of 0.4 MPa, and then cold isostatic pressing (10 min) is performed at a pressure of 350 MPa to obtain a blank target material.

[0064] S4. Degrease the rough target at 500°C, and sinter at 1200°C after degreasing to obtain an ATO target (the mass ratio of tin oxide to antimony oxide in the target is 99.5:0.5); where, the degreasing temperature The heat...

Embodiment 3

[0068] This embodiment is a method for preparing an ATO target (adjusting the mass ratio of tin chloride and antimony oxide to 99.7:0.3), including the following steps:

[0069] S1. Prepare powder with tin chloride and antimony oxide at a weight ratio of 99.7:0.3, put the powder into a ball mill for ball milling for 1 hour, and filter and dry the milled slurry at a drying temperature of 120°C. The time is 10h, and the BET is 10.5m 2 / g of ATO target precursor;

[0070] S2. ATO powder is obtained after spraying and granulating the ATO target precursor, and the D50 is 10 μm.

[0071] S3. The ATO powder is molded under a pressure of 0.4 MPa, and then cold isostatic pressing (10 min) is performed at a pressure of 350 MPa to obtain a blank target material.

[0072] S4. Degrease the blank target at 500°C, and sinter at 1200°C after degreasing to obtain an ATO target (the mass ratio of tin oxide to antimony oxide in the target is 99.7:0.3); where, the degreasing temperature The he...

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Abstract

The invention discloses an ATO target precursor and a preparation method and application thereof. The precursor is prepared from the following raw materials: tin oxide and antimony oxide, the mass fraction of the antimony oxide is 0.15%-1.8%; the specific surface area of the ATO target material precursor is between 15m < 2 > / g and 25m < 2 > / g. The ATO target material with excellent resistance uniformity and high optical transmittance is prepared by controlling the doping proportion of antimony oxide.

Description

technical field [0001] The invention relates to the technical field of photoelectric functional materials, in particular to an ATO target precursor and its preparation method and application. Background technique [0002] With the development of display technology, liquid crystal displays (LCDs) have become popular in the market due to their advantages such as low operating voltage, low power consumption, low radiation, and light and thin appearance. With the gradual improvement of people's awareness of liquid crystal displays, higher and higher requirements are put forward for display performance, such as high brightness, high contrast, high response speed, etc., and the requirements for the image quality of the entire display are also increasing. harsh. [0003] The image sticking problem has become the main factor affecting display performance. The image sticking is mainly due to the uneven distribution of electric field intensity caused by the low resistance characteris...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/457C04B35/622C23C14/34G02F1/1343
CPCC04B35/457C04B35/622C23C14/3414G02F1/13439C04B2235/3294C04B2235/3293C04B2235/5436
Inventor 刘永成陈明飞郭梓旋徐胜利江长久陈明高莫国仁王志杰李跃辉
Owner 长沙壹纳光电材料有限公司
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