A collector isolation reverse conduction type insulated gate bipolar transistor and a preparation method thereof
A bipolar transistor and collector technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the uneven distribution of RC-IGBT chip conduction current, non-uniform device turn-on time, and excessive chip current and other issues, to achieve the effects of small influence on switching characteristics, shortened reverse recovery time, and reduced reverse conduction power consumption
Inactive Publication Date: 2019-01-15
XIAN UNIV OF TECH
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Problems solved by technology
Otherwise, the conduction current distribution of parallel RC-IGBT chips will be uneven, so that the device turn-on time will not be uniform, and the current will flow concentratedly to a single chip, causing the chip to be burned due to excessive current
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[0030] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0031] Such as figure 1 As shown, the structure of the conventional reverse conduction transistor is that the MOS gate area, the N-drift area part and the P + collector.
[0032] Such as image 3 As shown, a collector isolation reverse conduction insulated gate bipolar transistor of the present invention includes MOS gate region 1, N-drift region 2, P + Collector 6, P + One side of the collector electrode 6 is adjacently provided with isolation regions 5 and N + Short circuit zone 7, N + A P-stop layer 4 is arranged above the short-circuit region 7, and the top surface of the isolation region 5 is located on the same plane as the top surface of the P-stop layer 4. An N-type floating field stop layer 3 is also arranged in the N-drift region 2, and the P- The stop layer 4 and the isolation region 5 are located under the N-type floating f...
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Abstract
The invention discloses a collector isolation reverse conduction type insulated gate bipolar transistor, comprising a MOS gate region arranged in sequence from top to bottom, an N-type insulated gatebipolar transistor, and a MOS gate region arranged in sequence from top to bottom. Drift region and P + collector, and an isolation region and an N + short-circuit region are sequentially arranged onone side of the P + collector, and the isolation region isolates the P + collector region and the N + short-circuit region; An upper surface of that N + short-circuit region is also provide with a P-Stop layer, N- An N-type floating field blocking layer is also arranged in the drift region. The invention also discloses a preparation method of the collector isolation reverse conduction type insulated gate bipolar transistor, which is in agreement with the conventional RC- Compared with IGBT, the blocking characteristic of IGBT is improved under the same structure parameters. Voltage folding phenomenon is completely eliminated in the positive conduction characteristics; As that Si3N4 material is adopt in the isolation region of the invention, the reverse conduction voltage drop is greatly reduced, so the reverse conduction power consumption of a collector isolation reverse conduction type insulated gate bipolar transistor with the Si3N4 structure is greatly reduced.
Description
technical field [0001] The invention belongs to the technical field of power semiconductor devices, and relates to a collector isolation reverse conduction insulated gate bipolar transistor, and also relates to a preparation method of the collector isolation reverse conduction insulated gate bipolar transistor. Background technique [0002] The IGBT is inseparable from the freewheeling diode in the application, and the IGBT and the freewheeling diode are usually packaged into a module and used together. Packaging the IGBT and the freewheeling diode chip together can effectively reduce the manufacturing package cost and the area of the module. However, there are major shortcomings in the heat dissipation and switch matching of the two chips. In order to improve this defect, reduce the cost, and increase the power density of the chip, the monolithic process integration is realized by fabricating the IGBT and the diode on one chip, that is, the RC-IGBT is formed. [0003] T...
Claims
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Patent Timeline
Login to View More IPC IPC(8): H01L29/06H01L21/331H01L29/739
CPCH01L29/0646H01L29/66325H01L29/7393
Inventor 马丽张如亮刘红艳张超康源李旖晨
Owner XIAN UNIV OF TECH