Sidewall process automatic control flow

Abstract

The invention relates to a sidewall process automatic control flow, which relates to a semiconductor integrated circuit manufacturing technology, comprising a sidewall deposition process for depositing a thin film dielectric layer on a wafer; Measuring the thickness of the thin film dielectric layer in the wafer surface, obtaining the thickness distribution database of the thin film dielectric layer in the wafer surface; Dividing the wafer into n regions (n>=2), obtaining a thin film dielectric layer thickness database of n regions in the wafer plane according to a thin film dielectric layer thickness distribution database in the wafer plane; selecting an etching program by an etching machine according to a database of the thickness of a thin film dielectric layer in n regions of a wafer plane to perform sidewall etching on the wafer so as to improve the sidewall thickness uniformity of the wafer.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to an automatic control process of a side wall process. Background technique [0002] In the semiconductor integrated circuit manufacturing technology, the spacer is a necessary structure of the semiconductor device. The spacer generally surrounds the polysilicon gate and is used to protect the gate. It is equipped with a lightly doped (LDD) process and can be well Reduce short channel effects. [0003] With the development of integrated circuit technology, semiconductor devices have further increased requirements on the uniformity of the sidewall process of the wafer and the uniformity of the semiconductor device. [0004] Existing sidewall processes include a sidewall deposition process and a sidewall etching process. First, the wafer is placed in a furnace through a sidewall deposition process to deposit a thin film dielectric layer, which...

AI Technical Summary

Problems solved by technology

Even through equipment teaching, the problem of inconsistency in the distribution of thin film dielectric layers cannot be completely eliminated. For details, please refer to image 3 , image 3 for right figure 2 The thickness distribution diagram of the thin film dielectric layer after the correction of the thin film dielectric layer is shown, such as image 3 As shown, there is still the problem of inconsistency in the distribution of thin film dielectric layers after correction

In this way, after the sidewall deposition process, the distribution of the thin film dielectric layer formed between the wafers is inconsistent, and in the subsequent sidewall etching process, a sidewall etching program (etch recipe) of the etching machine is not compatible The thin-film dielectric layer distribution of all wafers leads to better uniformity of sidewall thickness of some wafers, and poorer uniformity of sidewall thickness of some wafers. For details, please refer to Figure 4 , Figure 4 is the sidewall thickness distribution diagram after the sidewall etching process, such as Figure 4 As shown, the sidewall thickness distribution of different wafers is inconsistent, and the uniformity between devices is poor, and the product yield is reduced.

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