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Silicon nitride optical waveguide and manufacturing method thereof

A silicon nitride photonics and manufacturing method technology, applied in the field of integrated optics, can solve the problems of unfavorable miniaturization of optical devices, device failure, large lattice mismatch, etc., and achieve enhanced optical confinement effect, which is beneficial to miniaturization and internal stress Reduced effect

Active Publication Date: 2019-02-01
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0004] At present, the thickness of silicon nitride optical waveguides used in silicon-based integrated optical devices is relatively thin, otherwise, silicon nitride optical waveguides will be peeled off from silicon-based integrated optical devices, mainly because silicon nitride and silicon-based materials The lattice mismatch between them is relatively large, resulting in high stress in the silicon nitride grown on the silicon-based material. Due to the existence of high stress, the thickness of the silicon nitride optical waveguide reaches a certain thickness, and the nitride Silicon optical waveguides can detach from silicon-based integrated optics, causing device failure
[0005] Therefore, the thickness of the existing silicon nitride optical waveguide used in the field of silicon-based integrated optics is relatively thin, so that the light confinement effect is weak, and the light spot formed by the outgoing light is large, which is not conducive to the miniaturization of optical devices

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  • Silicon nitride optical waveguide and manufacturing method thereof
  • Silicon nitride optical waveguide and manufacturing method thereof
  • Silicon nitride optical waveguide and manufacturing method thereof

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Embodiment Construction

[0037] During the formation process of the existing silicon nitride optical waveguide, it is grown in one direction along the silicon-based substrate. Therefore, due to the lattice mismatch between silicon nitride and silicon-based materials, the silicon nitride optical waveguide The internal stress is relatively large, resulting in a thinner critical thickness of the silicon nitride optical waveguide. The thinner silicon nitride optical waveguide has a weaker confinement effect on the optical signal, and the light spot formed by the outgoing light is larger, which is not conducive to optical devices. miniaturization.

[0038] It should be noted that the critical thickness of the silicon nitride optical waveguide refers to the thickness of the silicon nitride optical waveguide formed on the silicon-based substrate when it is peeled off from the silicon-based substrate.

[0039] In order to solve the above technical problems, the present application provides a method for manufa...

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Abstract

The invention discloses a silicon nitride optical waveguide and a manufacturing method thereof. According to the method, a second strip-type groove is filled with silicon nitride to form the silicon nitride optical waveguide, wherein when the second strip-type groove is filled with the silicon nitride, the silicon nitride grows along the bottom of the groove and the side wall of the groove in different directions and the stress among the silicon nitride grown in different directions is mutually reduced, so that the internal stress of the formed silicon nitride optical waveguide is reduced; compared with a silicon nitride optical waveguide formed by the silicon nitride growing in one direction, the silicon nitride optical waveguide has the advantage that the thickness is larger when being peeled off from a silicon-based integrated optical device; compared with a method of growing a silicon nitride optical waveguide in one direction, the method has the advantage that a thicker silicon nitride optical waveguide can be formed; and the thicker silicon nitride optical waveguide has the advantages that the light constraint effect can be enhanced to form a smaller optical spot, thereby facilitating the miniaturization of the optical device.

Description

technical field [0001] The present application relates to the technical field of integrated optics, in particular to a silicon nitride optical waveguide and a manufacturing method thereof. Background technique [0002] An optical waveguide is a dielectric device that guides light waves to propagate in it, also known as a dielectric optical waveguide. There are two types of optical waveguides: one is integrated optical waveguides, including planar (film) dielectric optical waveguides and strip dielectric optical waveguides, which are usually part of optoelectronic integrated devices (or systems), so they are called integrated optical waveguides ; The other is a cylindrical optical waveguide, usually called an optical fiber. [0003] There are many kinds of materials used to form integrated optical waveguides, and silicon nitride is one of the optical waveguide materials. [0004] At present, the thickness of silicon nitride optical waveguides used in silicon-based integrate...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/13G02B6/136G02B6/122
CPCG02B6/122G02B6/13G02B6/136
Inventor 周章渝张青竹闫江许庆李志华李彬余金中唐波王文武谢玲张鹏
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI