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Semiconductor structure and forming method thereof

A semiconductor and gas technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as poor semiconductor structure performance, achieve the effects of reducing leakage current, increasing medium stress, and increasing migration rate

Inactive Publication Date: 2019-02-01
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the prior art semiconductor structures formed by the epitaxial growth process have poor performance

Method used

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  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof
  • Semiconductor structure and forming method thereof

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Embodiment Construction

[0031] There are many problems in the semiconductor structure formed in the prior art, for example, the performance of the formed semiconductor structure is poor.

[0032] In combination with a method for forming a semiconductor structure, the reasons for the poor performance of the semiconductor structure formed by the method are analyzed:

[0033] figure 1 It is a structural schematic diagram of a method for forming a semiconductor structure.

[0034] Please refer to figure 1 , providing a substrate 100, the substrate 100 includes an adjacent first region A and a second region B, and the substrate 100 in the first region A and the substrate 100 in the second region B respectively have fins 101; An isolation structure 102 is formed on the substrate 100 in the first region A and the second region B, and the isolation structure 102 covers part of the sidewall of the fin 101; through the first epitaxial growth process, the fin in the first region A A first epitaxial layer 111...

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Abstract

The invention provides a semiconductor structure and a forming method thereof. The forming method comprises steps: a substrate is provided, wherein the substrate comprises a first area and a second area which are adjacent; a first epitaxial layer is formed in the first area of the substrate, wherein the top surface of the first epitaxial layer is higher than the surface of the substrate in the first area; a second epitaxial layer is formed in the second area of the substrate, wherein the top surface of the second epitaxial layer is higher than the surface of the substrate in the second area; and the first epitaxial layer and the second epitaxial layer are etched, and the distance between the first epitaxial layer and the second epitaxial layer is increased. As the distance between the first epitaxial layer and the second epitaxial layer is increased, contact between the first epitaxial layer and the second epitaxial layer can be prevented, the leakage current between the first epitaxial layer and the second epitaxial layer is reduced, and the performance of the semiconductor structure is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. Transistors, as the most basic semiconductor devices, are currently being widely used. Therefore, as the component density and integration of semiconductor devices increase, the size of transistors is also getting smaller and smaller. As the size of transistors decreases, the number of semiconductor devices on a chip also increases, and the spacing between semiconductor devices gradually shrinks. [0003] Epitaxial growth refers to the growth of a single crystal layer with certain requirements and the same crystal orientation as the substrate on a single crystal substrate (substrate). The epitaxial growth process...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/06H01L29/10H01L29/78
CPCH01L29/0638H01L29/1033H01L29/66795H01L29/7842H01L29/785
Inventor 唐粕人卜伟海
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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