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esd protection device with ldmos-scr structure

A LDMOS-SCR, ESD protection technology, applied in the direction of semiconductor devices, electric solid state devices, electrical components, etc., can solve the problems of unavailable, high maintenance voltage, etc.

Active Publication Date: 2020-10-20
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above situation, it is necessary to provide an ESD protection device with an LDMOS-SCR structure for the problem that the LDMOS-SCR structure in the prior art cannot provide a higher sustain voltage

Method used

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  • esd protection device with ldmos-scr structure
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Embodiment Construction

[0026] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing the embodiments is to make the disclosure of the present invention more thorough and comprehensive.

[0027] It should be noted that when an element is referred to as being “fixed on” another element, it may be directly on the other element or there may be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and similar expressions are used herein for purposes of illustration only. ...

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Abstract

The present invention provides an ESD (Electro Static Discharge) protection device of an LDMOS-SCR structure. The ESD protection device of the LDMOS-SCR structure is mainly formed by a substrate P-SUB, a first NWD, a second NWD, a P well, a first N+ injection region, a first P+ injection region, a second P+ injection region, a second N+ injection region, a third P+ injection region, a first gate oxide, a first polysilicon gate, a first field oxide, a second gate oxide, a second polysilicon gate, a second field oxide, a first field oxide isolation region, a second field oxide isolation region,a third field oxide isolation region, a fourth field oxide isolation region and a fifth field oxide isolation region. The P well and the second P+ injection region are annular. A bleeder current pathis formed to weaken the positive feedback of the LDMOS-SCR structure so as to improve the maintenance voltage of the LDMOS-SCR structure in the electrostatic protection.

Description

technical field [0001] The invention relates to the technical field of electrostatic protection of integrated circuits, in particular to an ESD protection device with an LDMOS-SCR structure. Background technique [0002] In all links of the integrated circuit, it is possible to accumulate charges. Under appropriate conditions, the charges will be transferred, and the large current passing through the device may exceed the critical value of the device, causing the chip to burn. Statistics show that electrostatic discharge (Electro Static Discharge, ESD) is the most important cause of failure of integrated circuits. Especially for power integrated circuits, ESD has become the most important issue for designers. [0003] The high-voltage devices in power integrated circuits are usually LDMOS structures, which use a longer drift region to increase the breakdown voltage, but bring about the problem of weak electrostatic discharge capability. The most commonly used method to imp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
CPCH01L27/0266
Inventor 彭伟张云陈卓俊曾云
Owner HUNAN UNIV