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Coating removal method for oxidation plate

A technology of oxidized plate and deplating, which is applied in the field of semiconductor processing and can solve the problems of poor safety and strong oxidation

Pending Publication Date: 2019-02-12
上海富乐德智能科技发展有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the traditional deplating process, the deplating solution contains chromic acid, nitric acid and other substances with strong oxidizing properties, poor safety and serious pollution.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0051] The present invention will be further described below.

[0052] The deplating method for the oxidized plate (with a hardness of 280-320HV) for the natural oxidation process is as follows:

[0053] A method for deplating an oxidized plate, comprising the steps of,

[0054] Step 1: First, wipe the surface of the oxidation plate with acetone to clean it, and then use G220 fine sandblasting to remove the coating on the oxidation plate, and the sandblasting pressure is 4.5-5 kg.

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PUM

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Abstract

The invention relates to the technical field of semiconductor processing and discloses a coating removal method for an oxidation plate. The coating removal method comprises the following steps of 1, conducting sand blast on a coating film on the oxidation plate to remove the film; 2, selecting three or more oxidation plates as test pieces for a test, wherein the thickness of each oxidation plate is measured through a micrometer, then, first-time alkali etching is conducted, the oxidation plates are put into a first-level alkaline water tank and taken out after 3-5 minutes, the coating film etching condition of the test pieces is observed, after cleaning, the oxidation plates are put into nitric acid to be neutralized for 2-3 minutes, after neutralization, the oxidation plates are put intoa second-level alkaline water tank, alkali etching is conducted once more, the coating film condition is observed, and the alkali etching time is obtained; and 3, conducting alkali etching on the oxidation plate, so that coating removal of the coating film is achieved. By means of the coating removal method, the coating removal effect achieves the same level as that of chromic acid.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a deplating method Background technique [0002] Usually, the coating needs to be removed in the following two situations: (1) After long-term use, the coating of the workpiece has been damaged or seriously aged, and the coating needs to be removed and re-coated; (2) In production, the coating The coating does not meet the quality requirements. In order to reduce losses and save costs, it is necessary to remove the coating and let the workpiece be reworked and re-coated. [0003] In the traditional deplating process, the deplating solution contains chromic acid, nitric acid and other substances with strong oxidizing properties, poor safety and serious pollution. At present, due to environmental protection requirements, the original chromic acid deplating must be stopped, and there is an urgent need for a deplating method that replaces chromic acid for deplating....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/36
CPCC23F1/36
Inventor 张继月贺贤汉董卓懿
Owner 上海富乐德智能科技发展有限公司
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