A ladder-junction terminal extension structure for high-voltage power devices

Abstract

The present invention proposes a stepped junction terminal extension structure of a high-voltage power device, including a diode. The diode is sequentially provided with a cathode, a concentration N-type doped SiC substrate, a low-concentration N-type doped SiC epitaxial layer, and a high-concentration N-type SiC epitaxial layer. P-type doped SiC ohmic contact region, P-type doped SiC step junction terminal extension region, anode and oxide layer, the P-type doped SiC step junction termination extension region is extended by a high-concentration junction termination extension region and a low-concentration junction termination extension region zone composition, the high-concentration junction terminal expansion zone and the low-concentration junction terminal expansion zone are both ladder-type; the present invention proposes a double-zone junction-terminal expansion zone with a ladder type in the junction terminal expansion structure, in the case of the same process The stability of the structure of the double-region P-type doped SiC stepped junction terminal extension region is improved, so that the structure of the present invention has good pressure resistance and can tolerate a higher concentration of the junction terminal extension region.

Description

technical field [0001] The invention relates to the terminal technology of semiconductor power devices, in particular to a stepped junction terminal extension structure of high-voltage power devices. Background technique [0002] With the rapid development of power electronics technology, the performance of silicon-based power electronic devices has approached the limit of silicon materials, which has become one of the bottlenecks restricting the further development of power devices, which makes it impossible for silicon-based power electronic devices to be used in aerospace, military, etc. In the higher-level field, in order to adapt to the market, people have extensively studied wide-bandgap semiconductors that can replace them, among which wide-bandgap semiconductor materials represented by silicon carbide (SiC) have attracted people's strong interest because of their superior physical properties . [0003] With the increasing energy consumption in countries all over the...

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Problems solved by technology

[0004] In view of the above-mentioned problems, the present invention proposes to have a stepped dual-region junction termination extension region in the junction termination extension structure, which can ensure that the above junction termination extension is maintained in the step-type dual-region P-type doped SiC step junction termination extension region. The region is high-concentration, and the following junction terminal extension region is low-concentration. There are no additional steps in the dual-region process of the step-type dual-region P-type doped SiC step junction extension region, and the process is improved without changing the process. The stability of the structure of the dual-region P-type doped SiC stepped junction terminal extension region, while being able to tolerate a higher concentration of the junction termination extension region without the problem of device performance degradation

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