Lateral Diffused Metal Oxide Semiconductor Field Effect Transistor

Abstract

An embodiment of the present invention provides a laterally diffused metal oxide semiconductor field effect transistor comprising: a body region located on the upper part of the substrate; a drift region located on the upper part of the substrate and adjacent to the body region; a gate located on the body region and the drift region; The source region is located in the body region; the drain region is located in the drift region; the first isolation region is located in the drift region between the source region and the drain region; the top doped region is located under the first isolation region ; the capacitor is located above the well; and the second isolation region is located in the well between the source region and the capacitor; wherein in a plan view, the gate is in the shape of a circle, the drain region is arranged on the inner side of the circle, and the source The region is arranged outside the circle shape; wherein the circle shape has a gap, and the first isolation region and the second isolation region are connected at the gap, and the capacitor surrounds the gate.

Description

technical field [0001] The embodiments of the present invention relate to a semiconductor technology, in particular to a laterally diffused metal oxide semiconductor field effect transistor. Background technique [0002] High-voltage semiconductor components are suitable for high-voltage and high-power integrated circuits. Conventional high voltage semiconductor devices include lateral diffused metal oxide semiconductor field effect transistors (lateral diffused metal oxide semiconductor, LDMOS). The advantage of high-voltage semiconductor components is that they are easily compatible with other processes and are cost-effective, so they are widely used in power supplies, power management, display driver IC components, communications, automotive electronics, industrial control and other fields. [0003] When the LDMOSFET is connected to an AC power source, a large amount of electrostatic charge may accumulate, and the electrostatic charge may flow at any two terminals to gen...

AI Technical Summary

Problems solved by technology

Electrostatic discharge currents, if not properly controlled, can burn integrated circuits and cause component damage

For example, if the electrostatic discharge current flows from the drain to the source of the device, it may also flow to the gate of the device, causing damage to the gate

[0004] In summary, although the existing LDMOS field effect transistors generally meet the needs, they are not satisfactory in all aspects, especially the electrostatic discharge current of LDMOS field effect transistors still needs to be further improved

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