Gas shower device

A gas cluster, gas technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve problems such as uneven film thickness, and achieve the effect of improving spatial distribution uniformity and gas homogenization efficiency.

Pending Publication Date: 2019-03-01
CHENGDU JIANGYE OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Since the gas inlet pipe is usually much smaller than the shower metal plate, the gas density near the pipe outlet is higher than other positions, which is easy to cause uneven film thickness

Method used

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Embodiment Construction

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0027] The object of the present invention is to provide a gas shower device to solve the problems in the prior art, improve the uniformity of the shower gas, and operate under high temperature, corrosive gas and other working conditions.

[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings a...

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Abstract

The invention discloses a gas shower device which comprises a gas intake buffer structure, a first gas homogenization structure and a second gas homogenization structure which are sequentially connected, and a gas inlet of the gas intake buffer structure is used for being connected with a gas inlet duct. A gas outlet of the gas intake buffer structure is communicated to the first gas homogenization structure, the first gas homogenization structure and the second gas homogenization structure are provided with gas shower holes communicated with each other, and the bottom of the second gas homogenization structure is used for being connected to the vacuum chamber wall of an atomic layer deposition coating machine. The gas intake buffer structure can achieve initial decompression and divergence of the intake gas, and the double-layer gas homogenization structures are adopted to improve the distribution uniformity of the shower gas at a substrate. Components are connected through flanges with knife edge grooves, the air tightness is good, and the device is suitable for use under corrosive gas and high temperature working conditions. After connection with the metal sealing structure, thebuffer space in certain height is formed between the three structures to further improve the gas homogenization efficiency.

Description

technical field [0001] The invention relates to the technical field of thin-film device preparation by chemical reaction of gas-phase materials, in particular to a gas shower device. Background technique [0002] The technology of preparing thin films based on the chemical reaction of gas-phase materials has matured, and one of its representative coating methods is atomic layer deposition technology. At present, thin film materials that can be prepared by atomic layer deposition technology include metal oxides, metal nitrides, metal fluorides, metals, and metal sulfides. In atomic layer deposition technology, the reactant is deposited on the surface of the substrate in the form of gas to form a sub-monolayer, and then another reactant is deposited on the same substrate surface and undergoes a chemical reaction. Due to the unique chemical and physical process of atomic layer deposition coating, the film has good conformality and high step coverage. With the miniaturization ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45568C23C16/45544
Inventor 李六如
Owner CHENGDU JIANGYE OPTOELECTRONICS TECH
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