Method of adding auxiliary exposure graph
A technology of auxiliary graphics and graphics, which is applied in the direction of optics, photographic process of pattern surface, and originals for photomechanical processing, etc., can solve the problems of reducing the window of photolithography process, distortion of graphic size, and lower pass rate, etc. Achieve the effect of large photolithography process window, improve stability, and improve the qualified rate of finished products
Active Publication Date: 2019-03-01
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology
Since the front layer is a variety of substrates and undulating topography, the photolithography pattern of the ion implantation layer is affected by the substrate and its topography, and the pattern size will be distorted, resulting in line width deformation, reducing the photolithography process window, and generating defects. , reduce the pass rate
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[0018] Due to the short-length convexity of the original layer boundary (the photoresist boundary is concave), the auxiliary graphics cannot satisfy the length of the exposure auxiliary graphics itself and the exposure auxiliary graphics due to the small convex length based on the current software logic operation method. The sum of the distance from the line segment to the main graphic, so that the area of the first exposure auxiliary graphic cannot be added, and the second exposure auxiliary graphic is added at a place farther from the border of the main graphic, resulting in the addition of the exposure auxiliary graphic too far, and the exposure auxiliary effect Greatly reduced.
[0019] Before adding the exposure auxiliary graphics, the present invention firstly removes the bulge with shorter boundary length of the original layer, and then adds the exposure auxiliary graphics to the processed layer, so that the added position of the exposure auxiliary graphics can be clos...
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The invention discloses a method of adding an auxiliary exposure graph. The method includes acquiring a complete design layout of an original layer; performing OPC (optical proximity correction) on alayout of the current layer according to an acquired original layout graph, and selecting a region of the treated layout graph spacing less than the provision of requirement I; in the selected region,adding an auxiliary exposure graph which has dimensions meeting the provision of requirement II, and no graph is exposed on a silicon wafer; upon adding of the auxiliary exposure graph, if the boundary of photoresist has indentation, allowing the width of the indentation to be less than the provision of requirement III, removing the convex portion of the corresponding original layout graph, and adding the auxiliary exposure graph to a new boundary generated by the removal of the convex portion. The method has the advantages that an ion injection layer process window can be effectively enlarged, graph defects can be decreased, and product yield can be increased.
Description
technical field [0001] The invention relates to the fields of microelectronics and semiconductor manufacturing, in particular to a method for adding exposure-assisted graphics. Background technique [0002] With the continuous development of semiconductor technology and the continuous reduction of technology nodes, the requirements for the feature size of the ion implantation layer pattern and the alignment accuracy with the previous layer are getting higher and higher. The stability of pattern dimensions in the semiconductor manufacturing process is affected by various factors. Since the front layer is a variety of substrates and undulating topography, the photolithography pattern of the ion implantation layer is affected by the substrate and its topography, and the pattern size will be distorted, resulting in line width deformation, reducing the photolithography process window, and generating defects. , reduce the pass rate. Contents of the invention [0003] The techn...
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Login to View More IPC IPC(8): G03F1/36G03F1/38
CPCG03F1/36G03F1/38
Inventor 康萌张月雨于世瑞
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD