How to Add Exposure Assist Graphics
A technology of auxiliary graphics and graphics, which is applied in the direction of optics, photographic process of pattern surface, and originals for photomechanical processing, etc., can solve the problems of reducing the window of photolithography process, distortion of graphic size, and lower pass rate, etc. Achieving a large photolithography process window, improving stability, and improving the qualified rate of finished products
Active Publication Date: 2022-03-18
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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Problems solved by technology
Since the front layer is a variety of substrates and undulating topography, the photolithography pattern of the ion implantation layer is affected by the substrate and its topography, and the pattern size will be distorted, resulting in line width deformation, reducing the photolithography process window, and generating defects. , reduce the pass rate
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[0018] Due to the short-length convexity of the original layer boundary (the photoresist boundary is concave), the auxiliary graphics cannot satisfy the length of the exposure auxiliary graphics itself and the exposure auxiliary graphics due to the small convex length based on the current software logic operation method. The sum of the distance from the line segment to the main graphic, so that the area of the first exposure auxiliary graphic cannot be added, and the second exposure auxiliary graphic is added at a place farther from the border of the main graphic, resulting in the addition of the exposure auxiliary graphic too far, and the exposure auxiliary effect Greatly reduced.
[0019] Before adding the exposure auxiliary graphics, the present invention firstly removes the bulge with shorter boundary length of the original layer, and then adds the exposure auxiliary graphics to the processed layer, so that the added position of the exposure auxiliary graphics can be clos...
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Abstract
The invention discloses a method for adding exposure auxiliary graphics, which can obtain the complete design layout of the original layer; perform OPC correction processing on the layout of the current layer according to the obtained original layout graphics, and then reduce the distance between the processed layout graphics to less than the required one The area is selected; in the above selected area, add an exposure auxiliary pattern; the size of the exposure auxiliary pattern meets the second requirement, and the pattern will not be exposed on the silicon wafer; when adding the exposure auxiliary pattern, if the photoresist boundary exists Concave, if the width of the concavity is less than requirement 3, first remove the corresponding convex part of the original layout graphics, and then add exposure auxiliary graphics to the new boundary generated after removing the convex part. The invention can effectively increase the process window of the ion implantation layer, reduce pattern defects and improve the yield rate of products.
Description
technical field [0001] The invention relates to the fields of microelectronics and semiconductor manufacturing, in particular to a method for adding exposure-assisted graphics. Background technique [0002] With the continuous development of semiconductor technology and the continuous reduction of technology nodes, the requirements for the feature size of the ion implantation layer pattern and the alignment accuracy with the previous layer are getting higher and higher. The stability of pattern dimensions in the semiconductor manufacturing process is affected by various factors. Since the front layer is a variety of substrates and undulating topography, the photolithography pattern of the ion implantation layer is affected by the substrate and its topography, and the pattern size will be distorted, resulting in line width deformation, reducing the photolithography process window, and generating defects. , reduce the pass rate. Contents of the invention [0003] The techn...
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IPC IPC(8): G03F1/36G03F1/38
CPCG03F1/36G03F1/38
Inventor 康萌张月雨于世瑞
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD