Power device with super-junction structure and manufacturing method of power device
A technology of power devices and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as short circuit, burnout, and increased leakage
Active Publication Date: 2019-03-01
南京多基观测技术研究院有限公司
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- Abstract
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- Claims
- Application Information
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Problems solved by technology
However, in some special applications, especially when the application environment is poor, such as high temperature, high humidity, etc., the power device is prone to reliability problems. The voltage drops, and even burning and short circuit will occur in severe cases
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Embodiment Construction
[0031] The invention mainly provides a solution to the problem of reduced reliability of the power device when the application environment is poor.
[0032] In order to make the objectives, technical solutions and beneficial technical effects of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described implementation Examples are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0033] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The in...
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Abstract
The invention discloses a power device with a super-junction structure and a manufacturing method of the power device. The power device with the super-junction structure comprises a super-junction structure located in a terminal area, wherein the super-junction structure comprises at least one first semiconductor column of a first conductivity type and at least one second semiconductor column of asecond conductivity type, wherein the first semiconductor column and the second semiconductor column are transversely and alternately arranged; the super-junction structure further comprises a secondisolation layer and a third isolation layer, wherein the second isolation layer is connected with one end of the second semiconductor column; and the third isolation layer is connected with one end of the first semiconductor column. The super-junction structure in the power device with the super-junction structure is equivalent to a plurality of PN junctions which are connected in parallel, and arelatively high current can pass through, so that an active area of the power device with the super-junction structure can be protected.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power device with a super junction structure and a manufacturing method thereof. Background technique [0002] The withstand voltage capability of a power device mainly depends on the reverse bias breakdown voltage of a specific PN junction in the power device. In order to obtain a certain current capability, a power device is usually composed of many cells connected in parallel. When the power device is reverse withstand voltage, because the transverse electric field between the cells cancels each other, the breakdown generally does not occur inside the cell, but the outermost cell will break down due to the concentration of the electric field. Therefore, it is necessary to use junction termination to reduce the electric field and thus increase the breakdown voltage. [0003] Junction terminals are mainly divided into two types: truncated and extended. The extended typ...
Claims
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Login to View More IPC IPC(8): H01L29/06H01L21/8222
CPCH01L21/8222H01L29/0634
Inventor 不公告发明人
Owner 南京多基观测技术研究院有限公司