Light emitting diodes

Abstract

The present disclosure generally relates to semiconductor structures and, more particularly, to light emitting diodes and methods of manufacture. The method includes: forming fin structures with a doped core region, on a substrate material; forming a first color emitting region by cladding the doped core region of a first fin structure of the fin structures, while protecting the doped core regionsof a second fin structure and a third fin structure of the fin structures; forming a second color emitting region by cladding the doped core region of the second fin structure, while protecting the doped core regions of the first fin structure and the third fin structure; and forming a third color emitting region by cladding the doped core region of the third fin structure, while protecting the doped core regions of the first fin structure and the second fin structure.

Description

technical field [0001] The present disclosure relates generally to semiconductor structures and, more particularly, to light emitting diodes and methods of fabrication. Background technique [0002] Light emitting diodes (LEDs) are used in displays in many different types of devices. LED displays can be made with FinFET structures made of different materials, including gallium nitride on silicon (GaN-on-Si) or sapphire. [0003] Manufacturing LEDs is a challenge. For example, GaN has a lattice and thermal mismatch with Si, which can lead to stress in the structure, such as warping and cracking of the Si wafer. In addition, as the concentration of indium (In) increases, the lattice mismatch between GaN and Si also increases. Furthermore, the solid solubility of In in GaN is very low, which leads to a large number of growth defects in GaN. Contents of the invention [0004] In one aspect of the present disclosure, a method includes: forming a fin structure having a doped...

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Problems solved by technology

GaN, for example, has a lattice and thermal mismatch with Si, which can lead to stress in the structure, such as warping and cracking of the Si wafer

Furthermore, as the concentration of indium (In) increases, the lattice mismatch between GaN and Si also increases

In addition, the solid solubility of In in GaN is very low, which leads to a large number of growth defects in GaN

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