Semiconductor structures and methods of forming them

Abstract

A semiconductor structure and a method for forming the same, wherein the method includes: providing a substrate with a gate layer on the substrate, impurity ions in the gate layer, source and drain doped regions in the substrate on both sides of the gate layer, the substrate, source and drain There is a dielectric layer on the doped region and the gate layer; remove part of the dielectric layer on the source-drain doped region until the source-drain doped region is exposed, and form a source-drain contact hole in the dielectric layer; remove part of the gate layer Dielectric layer, until the gate layer is exposed, a gate contact hole is formed in the dielectric layer; a barrier layer is formed at the bottom of the gate contact hole; a metal layer is formed on the barrier layer and the bottom of the source-drain contact hole; annealing is performed to make the The metal layer reacts with the source and drain doping region material at the bottom of the source and drain contact holes to form a metal silicide layer at the bottom of the source and drain contact holes. The contact resistance of the device formed by the method is small.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to a semiconductor structure and a method of forming thereof. Background technique [0002] With the continuous development of semiconductor technology, the size of the semiconductor device is constantly decreasing. As the size of the semiconductor device is reduced, the contact resistance of the MOS transistor is increasingly affected by the performance of MOS transistors and the entire semiconductor chip. In order to improve the performance of the semiconductor chip, it is necessary to reduce the contact resistance of the MOS transistor. In the contact resistance of the MOS transistor, due to the source, the area of ​​the drain is small, the contact resistance between the conductive plug is large, and the performance of the MOS transistor is large, so that the operating speed of the semiconductor device is greatly reduced. [0003] The formation process of the...

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Problems solved by technology

[0004] However, when the metal silicide is formed, the contact resistance between the metal gate and the contact plug above the metal gate is likely to be relatively large.

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