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A thermal annealing method for improving room temperature ferromagnetism of ion-implanted Gan-based dilute magnetic semiconductor materials

A dilute magnetic semiconductor, room temperature ferromagnetism technology, applied in the application of conductive/insulating/magnetic materials on magnetic films, inorganic material magnetism, ion implantation plating and other directions, to achieve the effect of enhanced interaction and improved room temperature ferromagnetism

Active Publication Date: 2020-12-22
HEBEI UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a thermal annealing treatment method for co-implanting GaN-based dilute magnetic semiconductor materials with magnetic metal and non-magnetic ions to solve the problem of how to further improve the room temperature ferromagnetism of ion-implanted GaN-based dilute magnetic semiconductor materials

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  • A thermal annealing method for improving room temperature ferromagnetism of ion-implanted Gan-based dilute magnetic semiconductor materials
  • A thermal annealing method for improving room temperature ferromagnetism of ion-implanted Gan-based dilute magnetic semiconductor materials

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Embodiment 1

[0024]The first step is to prepare the GaN thin film material for ion implantation. The GaN base material is a GaN film epitaxially grown on a sapphire substrate (0001) using metal organic epitaxial growth technology (MOCVD). The thickness of the GaN film is 3 μm, and the GaN film material is n-type GaN that is unintentionally doped.

[0025]The second step is to perform the first ion implantation on the GaN thin film material. Before ion implantation, the GaN thin film material is repeatedly cleaned with acetone and alcohol to prevent impurities on the GaN surface from entering the GaN lattice during the ion implantation process. An ion implanter (LC-4 type ion implanter developed by the 48th Research Institute of China Electronics Technology Group Corporation) is used to ion implant the GaN film. The ion implantation process is carried out at room temperature, and the implanted ions are non-metal C ions. The ion implantation angle is 7° with the GaN surface to prevent channeling in t...

Embodiment 2

[0031]The other steps are the same as in embodiment 1, except that the implanted magnetic metal ion is changed from rare earth ion Dy to rare earth ion Gd. The increase percentage of the saturation magnetization of the obtained sample is similar to that of Example 1.

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Abstract

The invention relates to a thermal annealing method for improving room temperature ferromagnetism of an ion-implanted GaN substrate dilute magnetic semiconductor material. The thermal annealing methodcomprises the steps that firstly, non-magnetic ions are implanted into a GaN substrate, rapid thermal annealing treatment is carried out on the sample, then magnetic metal is injected into the annealed ion-implanted GaN substrate, second rapid thermal annealing treatment is carried out on a double-ion-implanted GaN sample, same protective gas is introduced into the two times of thermal annealingtreatment, and the heating rate and the heat preservation time are set according to the ion type of the ion implantation. The thermal annealing method is favorable for activating the implanted ion activity to the greatest extent, the ion implantation damage in the GaN substrate dilute magnetic semiconductor material is eliminated, and the interaction between spinning electrons and carriers is increased, so that the room temperature ferromagnetism of the GaN substrate dilute magnetic semiconductor material is improved.

Description

Technical field[0001]The invention relates to a method for recovering GaN-based diluted magnetic semiconductor ion implantation damage and improving the room temperature ferromagnetism of the diluted magnetic semiconductor by using a two-step thermal annealing process.Background technique[0002]Both the present and the future are information-dominated societies, and the two decisive factors supporting the existence and development of information technology are information storage and information processing. The storage of information utilizes the spin properties of electrons in magnetic materials, while the storage of information relies on the charge properties of electrons in semiconductor chips. Diluted magnetic semiconductors are semiconductor materials formed by partially replacing non-magnetic cations in semiconductors with magnetic transition metal ions or rare earth ions. They have the dual properties of electrons and charges and are used for the preparation of high-efficiency...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/48C23C14/58C23C16/34H01F1/40H01F41/14H01F41/32
CPCC23C14/48C23C14/5806C23C16/34H01F1/404H01F41/14H01F41/32
Inventor 梁李敏刘彩池李英
Owner HEBEI UNIV OF TECH