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IGBT (Insulated Gate Bipolar Translator) buffer circuit for frequency-conversion speed-regulation device

A technology of buffer circuit and frequency conversion speed regulation, which is applied in the field of electric transmission, and can solve the problem that the charging/discharging time of resistance cannot be changed, etc.

Pending Publication Date: 2019-03-08
TIANSHUI ELECTRIC DRIVE RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The circuits in Figure 1 all have the problem that the charging / discharging time of the resistor cannot be changed

Method used

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  • IGBT (Insulated Gate Bipolar Translator) buffer circuit for frequency-conversion speed-regulation device
  • IGBT (Insulated Gate Bipolar Translator) buffer circuit for frequency-conversion speed-regulation device
  • IGBT (Insulated Gate Bipolar Translator) buffer circuit for frequency-conversion speed-regulation device

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Experimental program
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Embodiment Construction

[0039] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0040] Such as figure 2 An IGBT snubber circuit for a frequency conversion speed control device is shown, which includes an insulated gate bipolar transistor IGBT1 and an insulated bipolar transistor IGBT2, the collector of the insulated bipolar transistor IGBT1 and one end of the stray inductance L, One end of the discharge resistor R1, the anode of the diode VD1 and the cathode of the diode VD4 are connected, the emitter of the insulated bipolar transistor IGBT1 is connected with the collector of the insulated bipolar transistor IGBT2, and one end of the capacitor C1, the capacitor C2 One end, the cathode of the diode VD2, and the anode of the diode VD4 are connected; the collector of the insulated bipolar transistor IGBT2 is connected to the cathode of the diode VD5, and the emitter of the insulated bipolar transistor IGBT2 is connected to the anode of th...

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Abstract

The invention discloses an IGBT (Insulated Gate Bipolar Translator) buffer circuit for a frequency-conversion speed-regulation device. The circuit comprises two IGBTs; two ends of a collecting electrode and an emitting electrode of each of the IGBTs are respectively connected with a discharge resistor, a diode and a capacitor. According to the IGBT buffer circuit for the frequency-conversion speed-regulation device, the capacitance value of the IGBT buffer circuit is changed by use of on and off characteristics of the diode, thereby achieving the purposes of effectively suppressing the transient over-voltage when the IGBTs are switched off, shortening the discharge time when the IGBTs are switched on and rapidly releasing the charge, and eliminating the uneven voltage distribution phenomenon of the IGBTs of a bridge arm.

Description

technical field [0001] The invention relates to the technical field of electric transmission, in particular to an IGBT snubber circuit for a frequency conversion speed regulating device. Background technique [0002] Inverter usually uses insulated bipolar transistor IGBT as the main circuit switching device, which is characterized by fast switching speed and high switching frequency. When the switching device of the frequency converter is turned off, it will cause a large peak overvoltage, resulting breakdown. Therefore, in order to ensure the safe operation of the frequency converter, a snubber circuit is often connected in parallel on the switching device. The snubber circuit is a protection circuit, the purpose of which is to prevent overvoltage on the switching device and reduce switching loss when the switching device is turned off, and at the same time, it can also prevent the damage of reverse bias secondary breakdown. In addition, in order to reduce the turn-on lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/34
CPCH02M1/34H02M1/344
Inventor 曹喜生赵兴彦党怀东坚德毅杜海峰梁伟艳李雷
Owner TIANSHUI ELECTRIC DRIVE RES INST
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