Wide spectrum infrared sensor based on piezoelectric effect and composite plasmon

An infrared sensor and plasmon technology, applied in the field of infrared sensing, can solve the problems of limited range of material selection, increased process complexity, limited number of stacked layers, etc., to overcome the limited bandwidth of infrared radiation absorption and reliable infrared transmission. Sensitive performance and easy adjustment of absorption width

Active Publication Date: 2019-03-12
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

At present, multi-layer structure absorption is usually used to increase the absorption bandwidth, and the absorption band of different layers is used to widen the absorption bandwidth of the absorption layer. Specifically, it includes: using different materials to prepare the absorption layer, but this method is limited by the stress of material preparation, and the range of material selection is limite

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  • Wide spectrum infrared sensor based on piezoelectric effect and composite plasmon
  • Wide spectrum infrared sensor based on piezoelectric effect and composite plasmon
  • Wide spectrum infrared sensor based on piezoelectric effect and composite plasmon

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Embodiment Construction

[0034] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0035] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.

[0036] Wide-spectrum infrared sensors based on piezoelectric effect and composite plasmons, such as figure 1 As shown, the infrared sensor also includes a readout integrated circuit substrate 1 (also known as ROIC substrate), a microelectromechanical resonator 2, a dielectric layer 3 and a metal array layer 4, the readout integrated circuit substrate 1, the micr...

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Abstract

The invention discloses a wide spectrum infrared sensor based on piezoelectric effect and composite plasmon, relates to the technical field of infrared sensing, and solves the problems of low absorption rate and limited wide-band absorption bandwidth in the prior art; the wide spectrum infrared sensor comprises a read-out integrated circuit substrate, a micro-electromechanical resonator, a dielectric layer and a metal array layer, and the read-out integrated circuit substrate, the micro-electromechanical resonator, the dielectric layer and the metal array layer are sequentially connected, wherein the metal array layer comprises a plurality of metal units, and each metal unit comprises at least three metal blocks with different sizes. According to the uncooled infrared sensor, a medium layer and the metal array layer are integrated on the surface of the FBAR, so that the enhanced absorption of the infrared spectrum by the uncooled infrared sensor is achieved, the absorption rate is improved from 20% to more than 80%; meanwhile, the wide-band absorption is achieved, the manufacturing is simple and the sensing performance of the infrared sensor is excellent; the FBAR and the like areintegrated on the read-out integrated circuit substrate, so that the integrated readout circuit can be integrally manufactured and produced in batch, and the cost is low; the sensor not only has the advantages of the traditional uncooled infrared sensor, but also has quick response and high sensing sensitivity.

Description

technical field [0001] The invention relates to the technical field of infrared sensing, in particular to a wide-spectrum infrared sensor based on piezoelectric effects and composite plasmons. Background technique [0002] According to the working temperature, infrared sensors are generally divided into two categories: cooling type and non-cooling type. Cooled infrared sensors are usually made of semiconductor materials. Using the photoelectric effect of some materials, the photosensitive material absorbs photons, causing changes in electrical parameters. In order to suppress hot carriers and noise, the operating temperature of the cooled infrared sensor is usually below 77K. It needs to be refrigerated by a refrigerator or liquid nitrogen, which will result in relatively large volume and weight, and relatively expensive prices. Uncooled infrared sensors are also called room temperature sensors, which can work at room temperature without refrigeration, so they have the ad...

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Application Information

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IPC IPC(8): G01J5/10G01J5/02
CPCG01J5/0205G01J5/0215G01J5/10
Inventor 梁中翥陶金孟德佳梁静秋秦余欣吕金光张宇昊秦正
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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