Preparation method of polarized infrared detector based on film bulk acoustic resonator
A thin-film bulk acoustic wave and infrared detector technology, applied in the field of infrared detection, can solve problems such as low energy utilization, low spatial resolution, and unstable structure, and achieve the effects of optimized structure and performance, small size, and low cost
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[0050] In order to understand the above-mentioned purpose, features and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0051] In the following description, many specific details are set forth in order to fully understand the present invention. However, the present invention can also be implemented in other ways different from those described here. Therefore, the protection scope of the present invention is not limited by the specific details disclosed below. EXAMPLE LIMITATIONS.
[0052] The present invention is based on the preparation method of the polarized infrared detector of the film bulk acoustic resonator, and concrete steps are as follows:
[0053] S1. Obtain silicon substrate 2-6
[0054] Such as figure 1 As shown, silicon substrates 2-6 are obtained; silicon substrates 2-6 are high-resistance double-throw silicon wafers commonl...
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