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Manufacturing method of nitride high electron mobility transistor with multi-gate structure

A technology with high electron mobility and manufacturing method, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of affecting device loss, the spacing can not be too small, etc., to achieve good protection, improve performance, small gate Effect of electrode spacing

Active Publication Date: 2022-03-11
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

and for figure 2 and image 3 For devices with two and three gate electrodes, limited by the resolution of the lithography equipment and the mechanical properties of the photoresist, the problem brought about by the traditional process of forming multiple gate electrodes at one time is that the gap between multiple gate electrodes is The spacing between them should not be too small, and generally need to be kept at 1 μm. For devices with multiple control electrodes, reducing the spacing between each electrode is necessary to improve performance, such as for multiple gate electrodes used as switches For devices, the insertion loss introduced by the epitaxial layer between multiple gate electrodes will greatly affect the overall loss of the entire device

Method used

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  • Manufacturing method of nitride high electron mobility transistor with multi-gate structure
  • Manufacturing method of nitride high electron mobility transistor with multi-gate structure
  • Manufacturing method of nitride high electron mobility transistor with multi-gate structure

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Experimental program
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Embodiment 1

[0050] After the source electrode 44 and the drain electrode 45 are completed, as Figure 6 A dielectric layer 46 is deposited as shown, and the dielectric layer 46 covers the source electrode 44, the drain electrode 45 and the AlGaN barrier layer 43 at the same time. The materials that can be used for the dielectric layer 46 include silicon nitride (SiN) and silicon oxide (SiO 2 ), the deposition method of the dielectric layer 46 includes sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition (PECVD), the preferred dielectric material and deposition method are SiN and PECVD, and the preferred thickness is 100-200nm.

[0051] Such as Figure 7 As shown, on the dielectric layer 46 between the source electrode 44 and the drain electrode 45, form windows 47 and 48 called gate feet, and the formation of gate feet windows 47 and 48 generally needs to be coated with a photoresist layer, exposed, Steps such as developing form a window in the photoresist la...

Embodiment 2

[0058] Such as Figure 5 After the completion of source electrode 44 and drain electrode 45 as shown, as Figure 13 As shown, the AA dielectric layer 61 and the B dielectric layer 62 are sequentially deposited on the source electrode 44, the drain electrode 45 and the AlGaN barrier layer 43, and the material that can be used for the A dielectric layer 61 includes a single layer of SiO 2 or by SiN and SiO 2 Composite dielectric layer composed of SiO 2 When, its thickness is preferably 10-20nm; when it is SiN and SiO 2 When forming a composite dielectric layer, the layer in contact with the AlGaN barrier layer is SiN, the preferred thickness is 5-10nm, and the SiO on it 2 The thickness is preferably 10-20 nm. The B dielectric layer 62 is SiN, and its preferred thickness is 100-200 nm. The methods for depositing the A dielectric layer 61 and the B dielectric layer 62 include sputtering, electron beam evaporation, plasma enhanced chemical vapor deposition (PECVD), preferably ...

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Abstract

The present invention proposes a method for manufacturing a nitride high electron mobility transistor with a multi-gate structure, which includes the following steps: (1) providing the first ohmic contact as the source electrode and the second ohmic contact as the drain electrode on the AlGaN barrier layer (2) prepare the first "T"-shaped gate electrode; (3) repeat steps 1) to 6) to prepare multiple "T"-shaped gate electrodes; (4) use each gate electrode as a mask, and use a dry method The multi-gate AlGaN / GaN HEMT device is prepared by etching method. Advantages: 1) Each gate electrode of the multi-gate device is formed independently, and a smaller gate electrode spacing can be obtained, effectively improving the performance of the nitride high electron mobility transistor when used as a control device; 2) The increased process steps in the manufacturing process are relatively small. 3) The surface of the epitaxial layer under each gate electrode can be well protected.

Description

technical field [0001] The invention relates to a method for manufacturing a nitride high electron mobility transistor with a multi-gate structure, and belongs to the technical field of transistor manufacturing. Background technique [0002] Aluminum Gallium Nitride (AlGaN) / Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT), as the third generation wide bandgap compound semiconductor device, has the characteristics of high breakdown voltage and high current density. What semiconductor technologies such as Si and GaAs do not have, makes it have unique advantages in the field of microwave applications. In recent years, research on AlGaN / GaN HEMTs as microwave power devices and high-power microwave switching devices has continued to advance, especially in control applications such as microwave high-power switches. Si and GaAs devices are more advantageous. [0003] In the structure of the traditional transistor, only one gate electrode is used to control the passa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/335H01L29/778
CPCH01L29/66462H01L29/7786
Inventor 任春江沈宏昌
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD