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Thin film transistor and preparation method thereof

A thin-film transistor and amorphous silicon technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems affecting the channel electrical properties and leakage current of thin-film transistors, achieve good photoresist removal, avoid electrical Sexual influence, the effect of improving product performance

Inactive Publication Date: 2019-03-12
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] The embodiment of the present invention provides a method for preparing a thin film transistor and a thin film transistor, so as to solve the problem that the removal of photoresist by wet etching will affect the channel electrical properties of the thin film transistor, and there is an obvious problem of high leakage current

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  • Thin film transistor and preparation method thereof
  • Thin film transistor and preparation method thereof
  • Thin film transistor and preparation method thereof

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Embodiment Construction

[0043] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

[0044] The terms "first", "second" and the like (if any) in the description and claims of the present invention and the above drawings are used to distinguish similar objects and not necessarily to describe a specific order or sequence. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments described herein can be practiced in sequences other than those illustrated or described herein. Furthermore, the terms ...

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Abstract

The embodiment of the invention discloses a thin film transistor and a preparation method thereof. The preparation method of the thin film transistor comprises a step of performing mulching treatmenton a back channel of a thin film transistor by utilizing O2 after photoresist is finally removed. The preparation method disclosed by the embodiment of the invention comprises the step of performing the mulching treatment on the back channel of the thin film transistor by utilizing O2 after the photoresist is finally removed, not only good photoresist removal effect can be achieved, but also influence on electrical properties of the back channel of the thin film transistor is also avoided, and product performance is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a preparation method of a thin film transistor and the thin film transistor. Background technique [0002] Photolithography technology is the process of forming thin film transistor (hin Film Transistor, TFT) and indium tin oxide (Indium tin oxide, ITO) pixel electrodes on glass respectively using n mask technology. Photolithography technology is mainly used in microelectronics. It generally processes semiconductors. It needs a mask with partly transparent and partly opaque. The same pattern as the mask can be obtained through exposure, development, etching and other techniques. First coat the photoresist on the processed semiconductor, and then cover it with a mask for exposure; the chemical composition of the photoresist in the light-transmitting part changes during the exposure process; then develop and corrode the chemically changed photoresist After that, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/306H01L21/311H01L29/786
CPCH01L21/306H01L21/31138H01L29/66765H01L29/78669
Inventor 黄辉
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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