Solar cell anti-PID device

Abstract

The invention discloses a solar cell anti-PID device capable of avoiding gas crossing and ensuring uniform distribution of mixed gas around the surface of the silicon wafer. The device comprises a nitrogen and oxygen one-way mixing device, a dual-oxygen generator, a gas mixing and homogenizing device and a gas pipe. The nitrogen and oxygen one-way mixing device is communicated with an air inlet ofthe dual-oxygen generator; and the gas mixing and homogenizing device is communicated with an air outlet of the dual-oxygen generator through the gas pipe. With the solar cell anti-PID device, the gas backflow and crossing are avoided effectively; the mixed gas covers the surface of the silicon wafer uniformly, so that adaptability to the silicon wafers with different lengths is improved; and theproduction cost is lowered effectively.

Description

technical field [0001] The invention relates to the field of solar cell anti-PID, in particular to a solar cell anti-PID device. Background technique [0002] Well-known: The full English name of the PID effect of solar cells is: Potential InducedDegradation, that is, potential-induced decay. In 2005, SunPower Corporation of the United States first discovered and proposed the PID effect, which means that the components work at high voltage for a long time, and there is leakage current between the cover glass, packaging material, and frame, and a large amount of charge accumulates on the surface of the cell, which makes the surface of the cell passivate. The effect deteriorates, resulting in a decrease in fill factor, short-circuit current, and open-circuit voltage, making the performance of the component lower than the design standard, but this attenuation is reversible. [0003] Therefore, the solar panel needs to carry out anti-PID treatment to avoid the PID phenomenon of...

AI Technical Summary

Problems solved by technology

In 2005, SunPower Corporation of the United States first discovered and proposed the PID effect, which means that the components work at high voltage for a long time, and there is leakage current between the cover glass, packaging material, and frame, and a large amount of charge accumulates on the surface of the cell, which makes the surface of the cell passivate. The effect deteriorates, resulting in a reduction in fill factor, short-circuit current, and open-circuit voltage, making the performance of the component lower than the design standard, but this attenuation is reversible

[0005] 1. The existing nitrogen and oxygen mixing device cannot adjust the flow of nitrogen and oxygen in real time, and at the same time cannot prevent the cross gas of oxygen and nitrogen, and is prone to backflow

[0006] 2. Directly pass the mixed gas directly to the surface of the silicon wafer, so that the gas in contact with the surface of the silicon wafer is not uniform, so that it is impossible to ensure the formation of a high-purity and dense silicon dioxide layer on the surface of the silicon wafer

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