A method for increasing the yield of silicon carbide powder

Abstract

Disclosed a method of improving the yield of silicon carbide powder, relating to the field of semiconductor material preparation. In the present application, a solid saccharide is added into the high-purity mixture of carbon powder and silicon powder; without the introduction of other impurities, after the saccharide is molten with the increasing of the temperature, a generated viscous liquid has high viscosity, and therefore, the layering of the carbon powder and the silicon powder can be prevented in the early stage of reaction; with the continuous increasing of the temperature, the saccharide is decomposed to generate other products, such as carbon dioxide and carbon monoxide; before the reaction temperature of the mixture is reached, these substances may be removed by means of vacuum pumping, and the mixture that is not layered is reserved, so that the reaction is performed more thoroughly, and thus the yield of the silicon carbide powder is improved.

Description

technical field [0001] The application relates to a method for increasing the yield of silicon carbide powder, which belongs to the field of semiconductor material preparation. Background technique [0002] As one of the most important third-generation semiconductor materials, silicon carbide single crystal is widely used in civil lighting, screens, etc. Display, aerospace, high temperature radiation environment, oil exploration, radar communication and automotive electronics and other fields. Silicon carbide single crystal is usually prepared from silicon carbide powder by sublimation method, so the purity, particle size and crystal form of silicon carbide powder used in sublimation method have a significant impact on the quality of silicon carbide single crystal. [0003] At present, the most commonly used SiC powder synthesis method in production is the self-propagating high-temperature synthesis method, which is to heat high-purity carbon powder and silicon powder to ab...

AI Technical Summary

Problems solved by technology

Since the particle size of high-purity carbon powder and high-purity silicon powder are not exactly the same, and the synthesis time of silicon carbide powder in a large crucible is often as long as 3 to 4 days, a certain degree of stratification will occur during the synthesis process, making carbon powder silicon The powder cannot be mixed evenly, resulting in incomplete reaction, thereby reducing the output of silicon carbide powder

[0004] The current patents mainly improve the purity of silicon carbide powder through the reaction process of synthetic materials, raw material pretreatment and product treatment, but do not involve how to improve the yield of silicon carbide powder

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