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Semiconductor device

A semiconductor, conductive type technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as the deterioration of the performance of semiconductor devices

Active Publication Date: 2019-03-26
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when too much dopant diffuses into the gate active portion (vertical portion) of the semiconductor device, the performance of the semiconductor device will be degraded

Method used

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  • Semiconductor device
  • Semiconductor device
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Embodiment Construction

[0010] The present invention provides a semiconductor device, the side part of the gate structure is serpentine and has a plurality of bent parts, so that the diffusion of dopants into the semiconductor device can be prolonged during the process of doping the semiconductor device to form a working device The path in the middle part of the gate structure prevents the high-concentration dopant from rapidly diffusing to the middle part of the gate structure due to annealing treatment, reduces the interference of the dopant to the working area of ​​the gate, and improves the performance of the semiconductor device.

[0011] figure 1 A top view of a semiconductor device 100 according to an embodiment of the present invention is shown. The semiconductor device 100 of the present invention can be applied to P-type metal oxide semiconductor (PMOS) or N-type metal oxide semiconductor (NMOS).

[0012] Figure 2A drawn along figure 1 A cross-sectional view of the A-A connection of the...

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Abstract

The invention discloses a semiconductor device comprising a substrate, an active layer, a contact region and a gate structure. The active layer is arranged on the substrate, and the active layer has asource region and a drain region. The contact area is arranged on the substrate. The gate structure is arranged on the active layer, wherein the gate structure includes a middle portion and a side portion, the side portion is connected to the middle portion, and the side portion is serpentine.

Description

technical field [0001] The present invention relates to a semiconductor device, and in particular to a silicon-on-insulator (SOI) semiconductor device. Background technique [0002] In recent years, due to the advantages of low power consumption and high performance of silicon on insulator (SOI) semiconductor devices, the demand is increasing. During the manufacturing process of the semiconductor device, dopants are applied to the gate of the silicon-on-insulator semiconductor device. However, when too much dopant diffuses into the gate active portion (vertical portion) of the semiconductor device, the performance of the semiconductor device deteriorates. Contents of the invention [0003] The present invention relates to a semiconductor device. The side parts of the gate structure are serpentine (one on the upper and lower sides) and have multiple bent parts. Therefore, in the process of doping the semiconductor device, the same size requirements , can extend the path o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/423H01L29/78
CPCH01L29/42356H01L29/78H01L29/4238H01L29/4983H01L29/78654H01L29/0692H01L29/4916H01L29/0649H01L29/42384H01L29/78615H01L29/42376H01L29/1033H01L29/0847
Inventor 何万迅梅奎邢溯
Owner UNITED MICROELECTRONICS CORP